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參數(shù)資料
| 型號(hào)： | TPIC1502DWR |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 20V V(BR)DSS | 1.5A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|陣| N溝道| 20V的五（巴西）直| 1.5AI（四）|蘇 |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 330K |
| 代理商： | TPIC1502DWR |
TPIC1502
QUAD AND HEX POWER DMOS ARRAY
SLIS054 – OCTOBER 1996
12
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 19
SOURCE-TO-DRAIN DIODE CURRENT
vs
SOURCE-TO-DRAIN VOLTAGE
VSD – Source-to-Drain Voltage – V
I
0.1
1
0.1
10
1
TJ = –40
°
C
TJ = 25
°
C
TJ = 150
°
C
10
VGS = 0
Q1A, Q1B, Q2A, Q2B
Figure 20
SOURCE-TO-DRAIN DIODE CURRENT
vs
SOURCE-TO-DRAIN VOLTAGE
I
VSD – Source-to-Drain Voltage – V
0.1
1
0.1
10
1
TJ = 25
°
C
TJ = 150
°
C
10
TJ = –40
°
C
VGS = 0
Q3A, Q3B, Q4A, Q4B,
Q5A, Q5B
Figure 21
DRAIN-TO-SOURCE VOLTAGE AND
GATE-TO-SOURCE VOLTAGE
vs
GATE CHARGE
V
Qg – Gate Charge – nC
0
0.2
0.4
0.6
0.8
1
1.2
1.4 1.6
6
4
2
0
8
10
12
V
14
16
6
4
2
0
8
10
12
14
16
1.8
2
ID = 0.75 A
TJ = 25
°
C
Q1A, Q1B, Q2A, Q2B
See Figure 4
VDD = 10 V
VDD = 12 V
VDD = 14 V
VDD = 12 V
Figure 22
DRAIN-TO-SOURCE VOLTAGE AND
GATE-TO-SOURCE VOLTAGE
vs
GATE CHARGE
V
Qg – Gate Charge – nC
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7 0.8
6
4
2
0
8
10
12
V
14
16
6
4
2
0
8
10
12
14
16
0.9
1
ID = 0.75 A
TJ = 25
°
C
See Figure 4
Q3A, Q3B,
Q4A, Q4B,
Q5A, Q5B
VDD = 10 V
VDD = 12 V
VDD = 14 V
VDD = 10 V
VDD = 14 V
VDD = 12 V
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