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參數(shù)資料
| 型號： | TP0610KL |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 60-V (D-S) MOSFET |
| 中文描述： | P通道60 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 82K |
| 代理商： | TP0610KL |
TP0610KL/BS250KL
Vishay Siliconix
New Product
Document Number: 72712
S-40244—Rev. A, 16-Feb-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0.0
0.3
0.6
0.9
1.2
1.5
1.8
50
25
0
25
50
75
100
125
150
On-Resistance vs. Junction Temperature
T
J
Junction Temperature ( C)
V
GS
= 10 V @ 500 mA
V
GS
= 4.5 V @ 25 mA
0
3
6
9
12
15
0.0
0.3
0.6
0.9
1.2
1.5
1.8
I
D
= 500 mA
Gate Charge
Q
g
Total Gate Charge (nC)
V
G
0
4
8
12
16
20
0
200
400
600
800
1000
On-Resistance vs. Drain Current
I
D
Drain Current (mA)
V
GS
= 4.5 V
V
GS
= 10 V
r
)
0
8
16
24
32
40
0
5
10
15
20
25
Capacitance
V
DS
Drain-to-Source Voltage (V)
C
C
rss
C
oss
C
iss
V
GS
= 0 V
V
GS
= 5 V
V
DS
= 30 V
V
DS
= 48 V
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
0
2
4
6
8
10
0
2
4
6
8
10
On-Resistance vs. Gate-Source Voltage
V
GS
Gate-to-Source Voltage (V)
I
D
= 500 mA
I
D
= 200 mA
r
)
1.2
1.5
1
100
1000
0.00
0.3
0.6
0.9
T
J
= 25 C
T
J
= 125 C
Source-Drain Diode Forward Voltage
V
SD
Source-to-Drain Voltage (V)
I
S
10
T
J
=
55 C
V
GS
= 0 V
r
D
(
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TP0610K | P-Channel 60-V (D-S) MOSFET |
| TP0610L | CONNECTOR ACCESSORY |
| TP0610T | CONNECTOR ACCESSORY |
| TP0610T | CONNECTOR ACCESSORY |
| TP0610L | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-60V，夾斷電流-0.18A的P溝道增強型MOSFET晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TP0610KL-TR1 | 功能描述:MOSFET 60V 0.27A 0.8W 10ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0610KL-TR1-E3 | 功能描述:MOSFET 60V 0.27A 0.8W 10ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0610K-T1 | 功能描述:MOSFET 60V 0.185A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0610K-T1-E3 | 功能描述:MOSFET 60V 0.185A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0610K-T1-GE3 | 功能描述:MOSFET 60V 0.185A 350mW 10ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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