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參數(shù)資料
| 型號： | TP0610KL |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 60-V (D-S) MOSFET |
| 中文描述： | P通道60 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 82K |
| 代理商： | TP0610KL |
TP0610KL/BS250KL
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72712
S-40244—Rev. A, 16-Feb-04
SPECIFICATIONS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS(th)
V
GS
= 0 V, I
D
=
10
μ
A
V
DS
= V
GS
, I
D
=
250
μ
A
V
DS
= 0 V, V
GS
=
V
DS
= 0 V, V
GS
=
V
DS
= 0 V, V
GS
=
V
DS
= 0 V, V
GS
=
V
DS
=
60 V, V
GS
= 0 V
V
DS
=
60 V, V
GS
= 0 V, T
J
= 55 C
V
DS
=
10 V, V
GS
=
4.5 V
V
DS
=
10 V, V
GS
=
10 V
V
GS
=
4.5 V, I
D
=
25 mA
V
GS
=
10 V, I
D
=
500 mA
V
GS
=
10 V, I
D
=
500 mA, T
J
= 125 C
V
DS
=
10 V, I
D
=
100 mA
I
S
=
200 mA, V
GS
= 0 V
60
V
Gate-Threshold Voltage
1
2.1
3.0
20 V
10
A
Gate Body Leakage
Gate-Body Leakage
I
GSS
10 V
200
10 V, T
J
= 85 C
5 V
500
nA
100
Zero Gate Voltage Drain Current
I
DSS
1
A
10
On State Drain Current
On-State Drain Current
a
I
D(on)
50
mA
600
5.5
10
Drain-Source On-Resistance
a
r
DS(on)
3.1
6
4.7
9
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
g
fs
V
SD
180
mS
0.9
1.4
V
Total Gate Charge
Q
g
Q
gs
Q
gd
1.7
3
Gate-Source Charge
V
=
30 V, V
=
15 V, I
DS
500 mA
0.26
nC
Gate-Drain Charge
GS
D
0.46
Gate Resistance
R
g
285
Turn On Time
Turn-On Time
t
d(on)
t
r
t
d(off)
t
f
2.4
5
V
DD
=
25 V, R
L
= 150
150 mA V
I
D
150 mA, V
GEN
=
10 V
= 10
R
g
10
15.5
25
ns
Turn Off Time
Turn-Off Time
21
35
12.5
20
Notes
a.
b.
Pulse test: PW
Guaranteed by design, not subject to production testing.
300 ms duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
300
600
900
1200
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
V
GS
= 10 V
8 V
5 V
4 V
V
GS
Gate-to-Source Voltage (V)
I
T
J
=
55 C
125 C
25 C
6 V
7 V
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
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|---|---|
| TP0610K | P-Channel 60-V (D-S) MOSFET |
| TP0610L | CONNECTOR ACCESSORY |
| TP0610T | CONNECTOR ACCESSORY |
| TP0610T | CONNECTOR ACCESSORY |
| TP0610L | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-60V，夾斷電流-0.18A的P溝道增強型MOSFET晶體管) |
相關代理商/技術(shù)參數(shù) |
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|---|---|
| TP0610KL-TR1 | 功能描述:MOSFET 60V 0.27A 0.8W 10ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0610KL-TR1-E3 | 功能描述:MOSFET 60V 0.27A 0.8W 10ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0610K-T1 | 功能描述:MOSFET 60V 0.185A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0610K-T1-E3 | 功能描述:MOSFET 60V 0.185A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0610K-T1-GE3 | 功能描述:MOSFET 60V 0.185A 350mW 10ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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