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參數(shù)資料
| 型號： | TN0106 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V，低門限2.0V，N溝道增強型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| 中文描述： | N溝道增強型場效應(yīng)管垂直的DMOS（60V的擊穿電壓，2.0V的低門限，?溝道增強型垂直的DMOS結(jié)構(gòu)場效應(yīng)管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 27K |
| 代理商： | TN0106 |
7-36
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
I
DRM
TO-92
*
I
D
(continuous) is limited by max rated T
j
.
0.5A
2.0A
0.5A
2.0A
TN0106/TN0110
Thermal Characteristics
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
TN0110
100
TN0106
60
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
0.6
2.0
V
V
GS
= V
DS
, I
D
= 0.5mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 250mA
V
GS
= 10V, I
D
= 500mA
I
D
= 0.5A, V
GS
= 10V
V
DS
= 25V, I
D
= 500mA
Change in V
GS(th)
with Temperature
Gate Body Leakage
-3.2
-5.0
mV/
°
C
100
nA
Zero Gate Voltage Drain Current
10
500
μ
A
I
D(ON)
ON-State Drain Current
0.75
1.4
2.0
3.4
R
DS(ON)
2.0
4.5
1.6
3.0
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.6
1.1
%/
°
C
225
400
m
Input Capacitance
50
60
Common Source Output Capacitance
25
35
pF
Reverse Transfer Capacitance
4.0
8.0
Turn-ON Delay Time
2.0
5.0
Rise Time
3.0
5.0
Turn-OFF Delay Time
6.0
7.0
Fall Time
3.0
6.0
Diode Forward Voltage Drop
1.0
1.5
V
I
SD
= 0.5A, V
GS
= 0V
I
SD
= 0.5A, V
GS
= 0V
Reverse Recovery Time
400
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
V
I
D
= 1mA, V
GS
= 0V
Drain-to-Source
Breakdown Voltage
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
Static Drain-to-Source
ON-State Resistance
V
DD
= 25V
I
D
= 1.0A
R
GEN
= 25
ns
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
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| TN0106N3 | 功能描述:MOSFET 60V 3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0106N3-G | 功能描述:MOSFET 60V 3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0106N3-G P002 | 功能描述:MOSFET N-CH Enhancmnt Mode MOSFET RoHS:否 制造商:Supertex 晶體管極性: 汲極/源極擊穿電壓: 閘/源擊穿電壓: 漏極連續(xù)電流: 電阻汲極/源極 RDS（導(dǎo)通）: 配置: 最大工作溫度: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| TN0106N3-G P003 | 功能描述:MOSFET N-Channel DMOS FET Low Threshold 2.0V RoHS:否 制造商:Supertex 晶體管極性: 汲極/源極擊穿電壓: 閘/源擊穿電壓: 漏極連續(xù)電流: 電阻汲極/源極 RDS（導(dǎo)通）: 配置: 最大工作溫度: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| TN0106N3-G P005 | 制造商:Supertex Inc 功能描述:MOSFET N-CH Enhancmnt Mode MOSFET |
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