參數(shù)資料
型號(hào)： TN0200K
廠商： Vishay Intertechnology,Inc.
英文描述： CONNECTOR ACCESSORY
中文描述： 連接器附件
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 32K
代理商： TN0200K
Specification Comparison
Vishay Siliconix
Document Number: 73004
19-May-04
www.vishay.com
1
TN0200K vs. TN0200T
Description:
Package:
Pin Out:
N-Channel MOSFET
SOT-23
Identical
Part Number Replacements:
TN0200K-T1 Replaces TN0200T-T1
TN0200K-T1—E3 (Lead Free version) Replaces TN0200T-T1
Summary of Performance:
The TN0200K is a technological upgrade with ESD protection for the original TN0200T. The ESD protection diodes on the
gate increase Gate-Body Leakage; otherwise both parts perform identically including limits to the parametric tables below.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TN0200K
TN0200T
Unit
Drain-Source Voltage
V
DS
V
GS
20
20
V
Gate-Source Voltage
8
8
Continuous Drain Current
T
A
= 25 C
See Note
I
D
0.73
0.58
4
0.35
0.22
0.73
0.58
4
0.35
0.22
A
Pulsed Drain Current
I
DM
Power Dissipation
T
A
= 25 C
T
A
= 70 C
P
D
W
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
T
j
and T
stg
R
thJA
55 to 150
357
55 to 150
357
C
C/W
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
TN0200K
TN0200T
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
(BR)DSS
V
G(th)
I
GSS
I
DSS
20
0.45
20
0.5
V
0.6
1.0
0.9
1.5
Gate-Body Leakage
5000
100
nA
Zero Gate Voltage Drain Current
1
1
A
On State Drain Current
On-State Drain Current
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 4.5 V
V
GS
= 2.5 V
I
D(on)
2.5
1.5
2.5
1.5
A
Drain Source On Resistance
Drain-Source On-Resistance
D (
r
Ds(on)
0.2
0.25
2.2
0.8
0.4
0.5
0.29
0.34
2.2
0.8
0.4
0.5
Forward Transconductance
Diode Forward Voltage
Dynamic
g
fs
V
SD
S
V
1.2
1.2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching
Qg
Qgs
Qgd
1400
190
300
2000
1900
50
750
2800
pC
nC
Turn-On Time
t
d(on)
t
r
t
d(off)
t
f
17
20
55
30
25
30
85
45
8
14
21
7
13
21
30
11
ns
Turn Off Time
Turn-Off Time
NS denotes parameter not specified.
相關(guān)PDF資料
PDF描述
TN0200T N-Channel 20-V (D-S) MOSFETs
TN0200TS N-Channel 20-V (D-S) MOSFETs
TN0200T N-Channel Enhancement-Mode MOSFET(N溝道增強(qiáng)型MOSFET)
TN0200TS N-Channel Enhancement-Mode MOSFET(N溝道增強(qiáng)型MOSFET)
TN0201KL-TR1 N-Channel 20−V (D−S) MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TN0200K 制造商:Vishay Intertechnologies 功能描述:MOSFET N SOT-23
TN0200K_07 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFETs
TN0200K-T1-E3 功能描述:MOSFET 20V 0.73A 0.35W 0.4ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN0200T 功能描述:MOSFET 20V 1.2A 0.35W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN0200TS 功能描述:MOSFET 20V 1.2A 1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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