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參數(shù)資料
| 型號： | TN0200TS |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) MOSFETs |
| 中文描述： | N溝道20 - V（下局副局長）的MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 66K |
| 代理商： | TN0200TS |
TN0200T/TS
Vishay Siliconix
Document Number: 70202
S-40277—Rev. F, 23-Feb-04
www.vishay.com
1
N-Channel 20-V (D-S) MOSFETs
PRODUCT SUMMARY
I
D
(A)
V
DS
(V)
r
DS(on)
( )
TN0200T
TN0200TS
20
0.4 @ V
GS
= 4.5 V
0.5 @ V
GS
= 2.5 V
0.73
1.2
0.65
1.1
FEATURES
Low On-Resistance: 0.29
Low Threshold: 0.9 V (typ)
2.5-V or Lower Operation
Fast Switching Speed: 22 ns
Low Input and Output
Leakage
BENEFITS
Low Offset Voltage
Low-Voltage Operation
High-Speed Circuits
Low Error Voltage
Low Battery Voltage
Operation
APPLICATIONS
Direct Logic-Level Interfact: TTL/CMOS
Dirvers: Relays, Solenoids, Lamps, Hammers
Battery Operated Systems, DC/DC Converters
Solid-State Relays
Load/Power Switching
Cell Phones, Pagers
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Marking Code:
TN0200T: NO
wll
TN0200TS: NS
wll
w
= Week Code
ll
= Lot Traceability
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TN0200T
TN0200TS
c
Unit
Drain-Source Voltage
V
DS
V
GS
20
20
V
Gate-Source Voltage
8
8
Continuous Drain Current
(T
J
= 150 C)
b
T
A
= 25 C
T
A
= 70 C
I
D
0.73
1.2
0.58
1.0
A
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
b
I
DM
I
S
4
4
0.6
1.0
Power Dissipation
b
T
A
= 25 C
T
A
= 70 C
P
D
0.35
1.0
W
0.22
0.65
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
TN0200T
TN0200TS
c
Unit
Maximum Junction-to-Ambient
b
R
thJA
357
125
C/W
Notes
a.
b.
c.
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t
Copper lead frame.
10 sec.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TN0200TS-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 20V 1.2A 3-Pin TO-236 T/R |
| TN0200T-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 20V 0.73A 3-Pin TO-236 T/R |
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