參數(shù)資料
型號(hào)： TMS417400P
廠商： Texas Instruments, Inc.
英文描述： 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS
中文描述： 4194304 - Word的4位高速DRAM等
文件頁數(shù)： 7/30頁
文件大?。?/td> 441K
代理商： TMS417400P
TMS416400, TMS416400P, TMS417400, TMS417400P
TMS426400, TMS426400P, TMS427400, TMS427400P
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS
SMKS881B – MAY 1995 – REVISED AUGUST 1995
7
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
CC
:
TMS41x400, TMS41x400P
TMS42x400, TMS42x400P
Voltage range on any pin (see Note 1):
TMS41x400, TMS41x400P
TMS42x400, TMS42x400P
Short-circuit output current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power dissipation
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to VSS.
– 1 V to 7 V
– 0.5 V to 4.6 V
– 1 V to 7 V
– 0.5 V to 4.6 V
. . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . .
50 mA
1 W
0
°
C to 70
°
C
– 55
°
C to 125
°
C
recommended operating conditions
TMS41x400
MIN
NOM
4.5
TMS42x400
NOM
3.3
UNIT
MAX
5.5
MIN
MAX
3.6
VCC
VSS
VIH
VIL
TA
NOTE 2: The algebraic convention, where the more negative (less positive) limit is designated as minimum, is used for logic-voltage levels only.
Supply voltage
5
3
V
Supply voltage
0
0
V
High-level input voltage
2.4
6.5
2
VCC + 0.3
0.8
V
Low-level input voltage (see Note 2)
– 1
0.8
– 0.3
V
Operating free-air temperature
0
70
0
70
°
C
相關(guān)PDF資料
PDF描述
TMS426400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS
TMS427400 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS
TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS
TMS416409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES
TMS417409ADJ-60 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TMS417409A 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES
TMS417409ADJ-60 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES
TMS417800A 制造商:TI 制造商全稱:Texas Instruments 功能描述:2097152 BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORY
TMS417809 制造商:TI 制造商全稱:Texas Instruments 功能描述:2097152-WORD BY 8-BIT HIGH-SPEED DRAMS
TMS417809A 制造商:TI 制造商全稱:Texas Instruments 功能描述:2097152 BY 8-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES
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