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參數(shù)資料
| 型號： | TMS416400P |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| 中文描述： | 4194304 - Word的4位高速DRAM等 |
| 文件頁數(shù)： | 14/30頁 |
| 文件大?。?/td> | 441K |
| 代理商： | TMS416400P |
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TMS416400, TMS416400P, TMS417400, TMS417400P
TMS426400, TMS426400P, TMS427400, TMS427400P
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS
SMKS881B – MAY 1995 – REVISED AUGUST 1995
14
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
timing requirements over recommended ranges of supply voltage and operating free-air
temperature (continued)
’4xx400-60
’4xx400P-60
’4xx400-70
’4xx400P-70
’4xx400-80
’4xx400P-80
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
tAWD
tCHR
tCRP
tCSH
tCSR
tCWD
tOED
tRAD
tRAL
tCAL
tRCD
tRPC
tRSH
tRWD
tCPW
tRASS
tRPS
tTAA
tTCPA
tTRAC
Delay time, column address to W low (read-write operation only)
55
63
70
ns
Delay time, RAS low to CAS high (CBR refresh only)
10
10
10
ns
Delay time, CAS high to RAS low
5
5
5
ns
Delay time, RAS low to CAS high
60
70
80
ns
Delay time, CAS low to RAS low (CBR refresh only)
5
5
5
ns
Delay time, CAS low to W low (read-write operation only)
40
46
50
ns
Delay time, OE to data
15
18
20
ns
Delay time, RAS low to column address (see Note 12)
15
30
15
35
15
40
ns
Delay time, column address to RAS high
30
35
40
ns
Delay time, column address to CAS high
30
35
40
ns
Delay time, RAS low to CAS low (see Note 12)
20
45
20
52
20
60
ns
Delay time, RAS high to CAS low
0
0
0
ns
Delay time, CAS low to RAS high
15
18
20
ns
Delay time, RAS low to W low (read-write operation only)
85
98
110
ns
Delay time, W low after CAS precharge (read-write operation only)
60
68
75
ns
μ
s
ns
Pulse duration, self-refresh entry from RAS low
100
100
100
Pulse duration, RAS precharge after self refresh
110
130
150
Access time from address (test mode)
35
40
45
ns
Access time from column precharge (test mode)
40
45
50
ns
Access time from RAS (test mode)
65
75
85
ns
’4x6400
64
64
64
tREF
Refresh time interval
’4x6400P
128
128
128
ms
’4x7400
32
32
32
’4x7400P
128
128
128
tT
Transition time
3
30
3
30
3
30
ns
NOTE 12: The maximum value is specified only to assure access time.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TMS417400P | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS426400P | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS427400 | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS427400P | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS416409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS416409A | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS4164-12FPL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Page Mode DRAM |
| TMS4164-12NL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Page Mode DRAM |
| TMS4164-15FPL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Page Mode DRAM |
| TMS416415NL | 制造商:TI 功能描述:New |
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