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參數(shù)資料
| 型號： | TMS416400P |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| 中文描述： | 4194304 - Word的4位高速DRAM等 |
| 文件頁數(shù)： | 10/30頁 |
| 文件大?。?/td> | 441K |
| 代理商： | TMS416400P |
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TMS416400, TMS416400P, TMS417400, TMS417400P
TMS426400, TMS426400P, TMS427400, TMS427400P
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS
SMKS881B – MAY 1995 – REVISED AUGUST 1995
10
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
conditions (unless otherwise noted) (continued)
TMS426400/P
PARAMETER
TEST CONDITIONS
’426400-60
’426400P-60
’426400-70
’426400P-70
’426400-80
’426400P-80
UNIT
MIN
2.4
MAX
MIN
2.4
MAX
MIN
2.4
MAX
VOH
High-level
output voltage
IOH = – 2 mA
IOH = – 100
μ
A
IOL = 2 mA
IOL = 100
μ
A
VCC = 3.6 V,
All others = 0 V to VCC
VCC = 3.6 V,
CAS high
LVTTL
V
LVCMOS
VCC–0.2
VCC–0.2
VCC–0.2
VOL
Low-level
output voltage
LVTTL
0.4
0.4
0.4
V
LVCMOS
0.2
0.2
0.2
II
Input current
(leakage)
VI = 0 V to 3.9 V,
±
10
±
10
±
10
μ
A
IO
Output current
(leakage)
VO = 0 V to VCC,
±
10
±
10
±
10
μ
A
ICC1§
Read- or write-
cycle current
VCC = 3.6 V,
Minimum cycle
70
60
50
mA
Standby
current
VIH = 2 V (LVTTL),
After 1 memory cycle,
RAS and CAS high
1
1
1
mA
ICC2
VIH = VCC – 0.2 V
(LVCMOS),
(
After 1 memory cycle,
RAS and CAS high
’426400
500
500
500
μ
A
),
’426400P
200
200
200
μ
A
ICC3§
Average
refresh current
(RAS-only
refresh
or CBR)
VCC = 3.6 V,
RAS cycling,
CAS high (RAS-only refresh),
RAS low after CAS low (CBR)
Minimum cycle,
70
60
50
mA
ICC4
Average page
current
VCC = 3.6 V,
RAS low,
tPC = MIN,
CAS cycling
60
50
40
mA
ICC6#
Self-refresh
current
CAS < 0.2 V,
Measured after tRASS min
RAS < 0.2 V,
250
250
250
μ
A
ICC10#
Battery
back-up
operating
current
(equivalent
refresh time is
128 ms),
CBR only
tRC = 31.25
μ
s,
VCC – 0.2 V
≤
VIH
≤
3.9 V,
0 V
≤
VIL
≤
0.2 V, W and OE = VIH,
Address and data stable
tRAS
≤
1
μ
s,
350
350
350
μ
A
For conditions shown as MIN/MAX, use the appropriate value specified in the timing requirements.
Measured with outputs open
§Measured with a maximum of one address change while RAS = VIL
Measured with a maximum of one address change while CAS = VIH
#For TMS426400P only
P
PRODUCT PREVIEW information concerns products in the formative or
design phase of development. Characteristic data and other
specifications are design goals. Texas Instruments reserves the right to
change or discontinue these products without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TMS417400P | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS426400P | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS427400 | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS427400P | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS416409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS416409A | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS4164-12FPL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Page Mode DRAM |
| TMS4164-12NL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Page Mode DRAM |
| TMS4164-15FPL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Page Mode DRAM |
| TMS416415NL | 制造商:TI 功能描述:New |
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