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參數(shù)資料
| 型號(hào)： | TMS416400P |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| 中文描述： | 4194304 - Word的4位高速DRAM等 |
| 文件頁數(shù)： | 12/30頁 |
| 文件大?。?/td> | 441K |
| 代理商： | TMS416400P |
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TMS416400, TMS416400P, TMS417400, TMS417400P
TMS426400, TMS426400P, TMS427400, TMS427400P
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS
SMKS881B – MAY 1995 – REVISED AUGUST 1995
12
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz (see Note 3)
PARAMETER
MIN
MAX
UNIT
Ci(A)
Ci(OE)
Ci(RC)
Ci(W)
Co
NOTE 3: VCC = NOM supply voltage
±
10%, and the bias on pins under test is 0 V.
Input capacitance, A0–A11
5
pF
Input capacitance, OE
7
pF
Input capacitance, CAS and RAS
7
pF
Input capacitance, W
7
pF
Output capacitance
7
pF
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature
PARAMETER
’4xx400-60
’4xx400P-60
’4xx400-70
’4xx400P-70
’4xx400-80
’4xx400P-80
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
tAA
tCAC
tCPA
tRAC
tOEA
tCLZ
tOH
tOHO
tOFF
tOEZ
NOTES:
Access time from column address (see Note 4)
30
35
40
ns
Access time from CAS low (see Note 4)
15
18
20
ns
Access time from column precharge (see Note 4)
35
40
45
ns
Access time from RAS low (see Note 4)
60
70
80
ns
Access time from OE low (see Note 4)
15
18
20
ns
Delay time, CAS low to output in low-impedance state
0
0
0
ns
Output data hold time (from CAS)
3
3
3
ns
Output data hold time (from OE)
3
3
3
ns
Output disable time after CAS high (see Note 5)
0
15
0
18
0
20
ns
Output disable time after OE high (see Note 5)
0
15
0
18
0
20
ns
4. Access times for TMS42x400 measured with output reference levels of VOH = 2 V and VOL = 0.8 V.
5. tOFF and tOEZ are specified when the output is no longer driven.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TMS417400P | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS426400P | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS427400 | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS427400P | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS416409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS416409A | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS4164-12FPL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Page Mode DRAM |
| TMS4164-12NL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Page Mode DRAM |
| TMS4164-15FPL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Page Mode DRAM |
| TMS416415NL | 制造商:TI 功能描述:New |
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