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參數(shù)資料
| 型號： | TMF3201J |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | Dual N-Channel Dual-Gate MOSFET |
| 中文描述： | 雙N溝道雙柵MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 218K |
| 代理商： | TMF3201J |
□
DC Characteristics
( T
j
= 25
℃
, per MOSFET, unless otherwise specified )
Page 2 of 8
http://www.tachyonics.co.kr
January. 2005.
Rev. 1.0
Gate2 cut-off current
Gate1 cut-off current
Drain-source current
Gate2-source threshold voltage
Gate1-source threshold voltage
Forward source-gate2 voltage
Forward source-gate1 voltage
Gate2-source breakdown voltage
Gate1-source breakdown voltage
Drain-source breakdown voltage
PARAMETER
20
50
16
1.2
1.0
1.5
1.5
10
10
-
MAX.
-
V
G2-S
=5V; V
G1-S
=V
DS
=0
I
G2-S
-
V
G1-S
=5V; V
G2-S
=V
DS
=0
I
G1-S
8
V
G2-S
=4V; V
DS
=5V; R
G
=62
I
DSX
V
0.3
V
DS
=5V; V
G1-S
=4V; I
D
=100
V
G2-S(th)
V
0.3
V
DS
=5V; V
G2-S
=4V; I
D
=100
V
G1-S(th)
V
0.5
V
G1-S
=V
DS
=0; I
S-G2
=10
V
(F)S-G2
V
0.5
V
G2-S
=V
DS
=0; I
S-G1
=10
V
(F)S-G1
V
6
V
G1-S
=V
DS
=0; I
G2-S
=10
V
(BR)G2-SS
V
6
V
G2-S
=V
DS
=0; I
G1-S
=10
V
(BR)G1-SS
V
10
V
G1-S
=V
G2-S
=0; I
D
=10
V
(BR)DSS
UNIT
MIN.
CONDITION
SYMBOL
Cross-modulation
Noise figure
Power gain
Reverse transfer capacitance
Output capacitance
Input capacitance at gate2
Input capacitance at gate1
Forward transfer admittance
PARAMETER
MAX.
TYP.
-
105
100
k=1%, fw=50MHz; funw=60MHz
AGC = 40dB
-
92
-
k=1%, fw=50MHz; funw=60MHz
AGC = 10dB
-
-
90
k=1%, fw=50MHz; funw=60MHz
AGC = 0dB
X
mod
2.5
1.7
-
f=800MHz; Z
i
= S
11 opt(NF)
-
1.5
-
f=400MHz; Z
i
= S
11 opt(NF)
NF
-
25
21
f=800MHz; Z
i
= S
11*
, Z
o
= S
22*
-
28
26
f=400MHz; Z
i
= S
11*
, Z
o
= S
22*
-
31
30
f=200MHz; Z
i
= S
11*
, Z
o
= S
22*
Gtr
fF
-
20
-
f=1MHz
C
rss
-
1.4
-
f=1MHz
C
oss
-
3.3
-
f=1MHz
C
ig2-ss
2.5
1.9
-
f=1MHz
C
ig1-ss
mS
40
30
25
Tj=25℃
Iy
FS
I
UNIT
MIN.
CONDITIONS
SYMBOL
□
AC Characteristics
( Common source; T
a
= 25
℃
, V
G2-S
= 4V, V
DS
=5V, I
D
=12mA ; per MOSFET ;unless otherwise specified )
Preliminary Specification
TMF3201J
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