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參數(shù)資料
| 型號(hào)： | TMF3201J |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | Dual N-Channel Dual-Gate MOSFET |
| 中文描述： | 雙N溝道雙柵MOSFET |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 218K |
| 代理商： | TMF3201J |
□
Description
The TMF3201J is an N-channel enhancement type, dual-insulated
gate, field-effect transistor that utilizes MOS construction.
It is consists of two equal dual gate MOSFET amplifiers with
shared source and gate2 leads. The source and substrate are
interconnected. Internal bias circuits enable DC stabilization and a
very good cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive
input voltage surges. The transistor has a SOT363 micro-
miniature plastic package.
□
Features
- Two AGC amplifiers in a single package
- Integrated gate protection diodes
- High AGC-range, high gain, low noise figure
□
Applications
-Two gain controlled input stage for UHF and VHF tuners
- Professional communications equipment
SOT363
Page 1 of 8
http://www.tachyonics.co.kr
January 2005.
Rev. 1.0
Dual N-Channel Dual-Gate MOSFET
Preliminary Specification
TMF3201J
□
Absolute Maximum Ratings
(T
a
= 25
℃
)
1. GATE 1(1) 4. DRAIN (2)
2. GATE 2 5. SOURCE
3. GATE 1(2) 6. DRAIN (1)
Unit in mm
Drain-Source Voltage
Drain Current
Gate 1 Current
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
℃
℃
T
j
150
T
stg
-65 ~ 150
P
tot
200
mW
mA
mA
I
G1
±
10
I
D
30
Ratings
Unit
V
DS
10
V
Per MOSFET ; unless otherwise specified
Parameter
Symbol
Caution
:
E
lectro
S
tatic
D
ischarge sensitive device, observe handling precaution
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