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參數(shù)資料
| 型號： | TMF3202Z |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | N-Channel Dual-Gate MOSFET |
| 中文描述： | N溝道雙柵MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 235K |
| 代理商： | TMF3202Z |
□
Description
The TMF3202Z is an enhancement type N-channel field-effect
transistor. The source and substrate are interconnected. Internal
bias circuits enable DC stabilization and a very good cross-
modulation performance during AGC. Integrated diodes between
the gates and source protect against excessive input voltage
surges. The transistor has a SOT343 micro-miniature plastic
package.
□
Features
- Gain controlled amplifier with AGC
- Integrated gate protection diodes
- High AGC-range, high gain, low noise figure
□
Applications
- Gain controlled input stage for UHF and VHF tuners
- Professional communications equipment
Page 1 of 8
http://www.tachyonics.co.kr
October. 2005.
Rev. 1.0
N-Channel Dual-Gate MOSFET
Preliminary Specification
TMF3202Z
□
Absolute Maximum Ratings
(T
a
= 25
℃
)
Drain-Source Voltage
Drain Current
Gate 1 Current
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Ratings
10
30
Unit
V
mA
mA
V
DS
I
D
Parameter
Symbol
P
tot
T
stg
200
mW
I
G1
±
10
℃
℃
T
j
150
-65 ~ 150
Caution
:
E
lectro
S
tatic
D
ischarge sensitive device, observe handling precaution
SOT343
1. SOURCE
3. GATE 2
2. DRAIN
4. GATE 1
Unit in mm
2 3
1 4
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