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| 型號： | TM248GBK32-80 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | DYNAMIC RAM MODULES |
| 中文描述： | 動態(tài)隨機存儲器模塊 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 158K |
| 代理商： | TM248GBK32-80 |
TM124FBK32, TM124FBK32S 1048576 BY 32-BIT
TM248GBK32, TM248GBK32S 2097152 BY 32-BIT
DYNAMIC RAMMODULES
SMMS664A – DECEMBER 1995 – REVISED JUNE 1996
6
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Voltage range on any pin (see Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage range on V
CC
(see Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Short circuit output current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power dissipation: TM124FBK32, TM124FBK32S
TM248GBK32, TM248GBK32S
Operating free-air temperature range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to VSS.
– 1 V to 7 V
– 1 V to 7 V
50 mA
8 W
16 W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0
°
C to 70
°
C
– 55
°
C to 125
°
C
recommended operating conditions
MIN
4.5
NOM
MAX
5.5
UNIT
V
VCC
VIH
VIL
TA
NOTE 2: The algebraic convention, where the more negative (less positive) limit is designated as minimum, is used for logic voltage levels only.
Supply voltage
5
High-level input voltage
2.4
6.5
V
Low-level input voltage (see Note 2)
– 1
0.8
V
°
C
Operating free-air temperature
0
70
electrical characteristics over full ranges of recommended operating conditions (unless otherwise
noted)
PARAMETER
TEST CONDITIONS
’124FBK32-60
MIN
2.4
’124FBK32-70
MIN
2.4
’124FBK32-80
MIN
2.4
UNIT
MAX
MAX
MAX
VOH
VOL
High-level output voltage
IOH = – 5 mA
IOL = 4.2 mA
VI = 0 to 6.5 V,
All other pins = 0 to VCC
VO = 0 to VCC,
CAS high
V
Low-level output voltage
0.4
0.4
0.4
V
II
Input current (leakage)
VCC = 5 V,
±
10
±
10
±
10
μ
A
IO
Output current (leakage)
VCC = 5.5 V,
±
10
±
10
±
10
μ
A
ICC1
Read- or write-cycle current
(see Note 3)
Minimum cycle,
VCC = 5.5 V
840
720
640
mA
ICC1
Standby current
After one memory cycle,
RAS and CAS high,
VIH=2.4 V (TTL)
After one memory cycle,
RAS and CAS high,
VIH = VCC – 0.2 V (CMOS)
Minimum cycle,
RAS cycling,
CAS high (RAS-only),
RAS low after CAS low (CBR)
tPC = minimum,
RAS low, CAS cycling
16
16
16
mA
8
8
8
ICC3
Average refresh current
(RAS-only or CBR) (see Note 3)
VCC = 5.5 V,
840
720
640
mA
ICC4
Average page current
(see Note 4)
VCC = 5.5 V,
720
640
560
mA
NOTES:
3. Measured with a maximum of one address change while RAS = VIL.
4. Measured with a maximum of one address change while CAS = VIH.
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