參數(shù)資料
型號: TM16EN72LPU-40
廠商: TEXAS INSTRUMENTS INC
元件分類: DRAM
英文描述: 16M X 72 EDO DRAM MODULE, 20 ns, DMA168
封裝: DIMM-168
文件頁數(shù): 4/21頁
文件大?。?/td> 344K
代理商: TM16EN72LPU-40
TM16EN64HPU, TM16EN64LPU 16777216 BY 64BIT
TM16EN72HPU, TM16EN72LPU 16777216 BY 72BIT
EXTENDEDDATAOUT DYNAMIC RAM MODULES
SMMS695A AUGUST 1997 REVISED NOVEMBER 1997
12
POST OFFICE BOX 1443
HOUSTON, TEXAS 772511443
ac timing requirements
’16ENxxxPU-40
’16ENxxxPU-50
’16ENxxxPU-60
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
tRC
Cycle time, random read or write
69
84
104
ns
tRWC
Cycle time, read-write
92
111
135
ns
tRASP
Pulse duration, RASx active, fast page mode (see Note 7)
40
100 000
50
100 000
60
100 000
ns
tRAS
Pulse duration, RASx active, non-page mode (see Note 7)
40
10 000
50
10 000
60
10 000
ns
tRP
Pulse duration, RASx precharge
25
30
40
ns
tWP
Pulse duration, write command
6
8
10
ns
tRASS
Pulse duration, RASx active, self refresh (see Note 8)
100
ms
tRPS
Pulse duration, RASx precharge after self refresh
70
90
110
ns
tASC
Setup time, column address
0
ns
tASR
Setup time, row address
0
ns
tDS
Setup time, data in (see Note 9)
0
ns
tRCS
Setup time, read command
0
ns
tCWL
Setup time, write command before CASx precharge
6
8
10
ns
tRWL
Setup time, write command before RASx precharge
6
8
10
ns
tWCS
Setup time, write command before CASx active
(early-write only)
0
ns
tWRP
Setup time, WEx high before RASx low (CBR refresh only)
5
ns
tWTS
Setup time, WEx low before RASx low (test mode only)
5
ns
tCSR
Setup time, CASx referenced to RASx ( CBR refresh only )
5
ns
tCAH
Hold time, column address
6
8
10
ns
tDH
Hold time, data in (see Note 9)
6
8
10
ns
tRAH
Hold time, row address
6
8
10
ns
tRCH
Hold time, read command referenced to CASx (see Note
10)
0
ns
tRRH
Hold time, read command referenced to RASx (see Note
10)
0
ns
tWCH
Hold time, write command during CASx active
( early-write only )
6
8
10
ns
tROH
Hold time, RASx referenced to OEx
6
8
10
ns
tWRH
Hold time, WEx high after RASx low (CBR refresh)
6
8
10
ns
tWTH
Hold time, WEx low after RASx low (test mode only)
6
8
10
ns
tCHR
Hold time, CASx referenced to RASx (CBR refresh only )
6
8
10
ns
tOEH
Hold time, OEx command
11
13
15
ns
tCHS
Hold time, CASx active after RASx precharge (self-refresh)
50
ns
tRHCP
Hold time, RASx active from CASx precharge
22
28
35
ns
NOTES:
7. In a read-write cycle, tRWD and tRWL must be observed.
8. During the period of 10
ms tRASS 100 ms, the device is in transition state from normal operation mode to self-refresh mode.
9. Referenced to the later of CASx or WEx in write operations
10. Either tRRH or tRCH must be satisfied for a read cycle.
PRODUCT
PREVIEW
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