參數(shù)資料
型號: TM16EN72LPU-40
廠商: TEXAS INSTRUMENTS INC
元件分類: DRAM
英文描述: 16M X 72 EDO DRAM MODULE, 20 ns, DMA168
封裝: DIMM-168
文件頁數(shù): 16/21頁
文件大?。?/td> 344K
代理商: TM16EN72LPU-40
TM16EN64HPU, TM16EN64LPU 16777216 BY 64BIT
TM16EN72HPU, TM16EN72LPU 16777216 BY 72BIT
EXTENDEDDATAOUT DYNAMIC RAM MODULES
SMMS695A AUGUST 1997 REVISED NOVEMBER 1997
4
POST OFFICE BOX 1443
HOUSTON, TEXAS 772511443
dual-in-line memory module and components
The dual-in-line memory module and components include:
D PC substrate: 1,27 " 0,1 mm (0.05 inch) nominal thickness; 0.005 inch/inch maximum warpage
D Bypass capacitors: Multilayer ceramic
D Contact area: Nickel plate and gold plate over copper
functional block diagram for the TM16EN64xPU
CAS
OE
W
RAS
U0
RAS0
WE0
OE0
CAS0
DQ[0:3]
CAS
OE
W
RAS
UB0
RAS2
WE2
OE2
CAS4
DQ[32:35]
A0
A1
A2
SCL
SDA
SA0
SA1
SA2
SPD EEPROM
DQ[0:3]
CAS
OE
W
RAS
U1
DQ[4:7]
CAS
OE
W
RAS
UB1
DQ[36:39]
DQ[0:3]
CAS
OE
W
RAS
U2
CAS1
DQ[8:11]
CAS
OE
W
RAS
UB2
CAS5
DQ[40:43]
DQ[0:3]
CAS
OE
W
RAS
U3
DQ[12:15]
CAS
OE
W
RAS
UB3
DQ[44:47]
DQ[0:3]
CAS
OE
W
RAS
U4
CAS2
DQ[16:19]
CAS
OE
W
RAS
UB4
CAS6
DQ[48:51]
DQ[0:3]
CAS
OE
W
RAS
U5
DQ[20:23]
CAS
OE
W
RAS
UB5
DQ[52:55]
DQ[0:3]
CAS
OE
W
RAS
U6
CAS3
DQ[24:27]
CAS
OE
W
RAS
UB6
CAS7
DQ[56:59]
DQ[0:3]
CAS
OE
W
RAS
U7
DQ[28:31]
CAS
OE
W
RAS
UB7
DQ[60:63]
DQ[0:3]
TM16EN64HPU
A[0:11]
A[0:11]: U[0:7], UB[0:7]
TM16EN64LPU
A[0:12]
A[0:12]: U[0:7], UB[0:7]
LEGEND: CS
=
Chip select
SPD =
Serial Presence Detect
PRODUCT
PREVIEW
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