參數(shù)資料
型號(hào): TLE6280GP
廠商: INFINEON TECHNOLOGIES AG
英文描述: 3-Phase Bridge Driver IC
中文描述: 三相橋驅(qū)動(dòng)器集成電路
文件頁(yè)數(shù): 19/24頁(yè)
文件大?。?/td> 821K
代理商: TLE6280GP
Datasheet TLE6280GP
Typ. undervoltage shut down level
5
5,5
6
6,5
7
7,5
-40
-20
0
20
40
60
80
100
120
140
Temperature [°C]
Typ. Current consumption of output stage
Conditions:
Vs=12V; measured with V(BHx=12V) and potentiometer between SHx and GND
Parameter:
MFP voltage / T
Junction
Fig. 11: Typ. undervoltage shut down (Voltage of
bootstrap capacitors)
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
1,8
5
6
7
8
9
10
11
V(Bxx)-V(Sxx) [V]
2V 150°C
4V 150°C
5V 150°C
2V 25°C
4V 25°C
5V 25°C
2V -40°C
4V -40°C
5V -40°C
Fig. 12: Leakage current of driver output stages measured
as current out of SH Pin to GND
Remark:
The leakage current of the driver output stage is taken from the bootstrap capacitors C
BX
. When an external
high-side Mosfet is switched on, it is impossible to replace this current. The capacitor will be discharged as long
as this Mosfet stays on. The time until this output stage reaches the undervoltage shut-down can be determined
by the size of the capacitor, the initial capacitor voltage, the leakage current taken out of this capacitor and the
undervoltage lock-out level.
19
2004-03-31
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