參數(shù)資料
型號(hào): TLE6280GP
廠商: INFINEON TECHNOLOGIES AG
英文描述: 3-Phase Bridge Driver IC
中文描述: 三相橋驅(qū)動(dòng)器集成電路
文件頁(yè)數(shù): 15/24頁(yè)
文件大小: 821K
代理商: TLE6280GP
Datasheet TLE6280GP
Electrical Characteristics
(continued)
Parameter and Conditions
at
T
j
= –40 … +150 °C, unless otherwise specified
and supply voltage range
V
S
= 8 ... 20V; f
PWM
= 20kHz;
V
Bxx
>7.5V
Symbol
Values
typ
Unit
min
max
dI /dt limitation
Non reaction level for dI/dt limitation (100% gate
driver capability) @ V
DIDT
>0V
Non reaction level for dI/dt limitation (100% gate
driver capability) @ V
DIDT
<0V
Max. V
Gxx
at full reaction level for dI/dt limitation @
V
DIDT
= -5V
@
T
J
= -40°C
@
T
J
= +25°C
@
T
J
= +150°C
Min. falltime at full reaction level for dI/dt limitation
@ V
DIDT
= +5V
@
T
J
= -40°C
@
T
J
= +25°C
@
T
J
= +150°C
Impedance of DIDT Pin to GND
10kHz<f<10MHz; V
DIDT
= 5V
Default status of input pins:
To assure a defined status of all input pins in case of disconnection, these pins are internally
secured by pull-up or pull-down current sources with approx. 10μA.
The following table shows the default status of each input pin.
Input pin
ILx
IHx
DIDT
DT
MFP
V
DIDT
2
--
--
V
V
DIDT
--
--
-2
V
V
Gxx(DIDT)
--
--
--
1.9
2.3
3.4
3.0
3.0
4.2
V
t
fall (DIDT)
20
20
20
65
68
70
60
--
--
--
μs
Z
DIDT
Default status
Low (ext. Mosfet off)
High (ext. Mosfet off)
Low (no dI/dt limitation)
2μs dead time
Disable (pull-down)
15
2004-03-31
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