- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384000 > TISPPBL3DR-S (BOURNS INC) DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) PDF資料下載
參數(shù)資料
| 型號： | TISPPBL3DR-S |
| 廠商： | BOURNS INC |
| 元件分類： | 保護電路 |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) |
| 中文描述： | TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 |
| 封裝： | ROHS COMPLIANT, PLASTIC, MS-012, SO-8 |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 356K |
| 代理商： | TISPPBL3DR-S |
OCTOBER 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Rating
Symbol
V
DRM
V
GKRM
Value
-170
-160
Unit
Repetitive peak off-state voltage, V
GK
= 0, -40
°
C
≤
T
J
≤
85
°
C
Repetitive peak gate-cathode voltage, V
KA
= 0, -40
°
C
≤
T
J
≤
85
°
C
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
10/1000
μ
s (Telcordia GR-1089-CORE Issue 2, with Revision 1, February 1999)
5/310
μ
s (ITU-T K.20, K.21 & K.45, K.44 open-circuit voltage wave shape 10/700
μ
s)
2/10
μ
s (Telcordia GR-1089-CORE Issue 2, with Revision 1, February 1999)
Non-repetitive peak on-state current, 50/60 Hz, T
A
= 25
°
C (see Notes 2 and 3)
100 ms
1 s
5 s
300 s
900 s
Non-repetitive peak gate current, 1/2
μ
s pulse, cathodes commoned (see Note 1)
Operating free-air temperature range
Junction temperature
Storage temperature range
V
V
I
TSP
A
30
40
100
I
TSM
A
10
4.4
2.1
0.64
0.60
40
I
GSM
T
A
T
J
T
stg
A
-40 to +85
-40 to +150
-65 to +150
°
C
°
C
°
C
NOTES: 1. Initially, the protector must be in thermal equilibrium with -40
°
C
≤
T
J
≤
85
°
C. The surge may be repeated after the device returns
to its initial conditions. Above 85
°
C, derate linearly to zero at 150
°
C lead temperature.
2. These non-repetitive rated currents are peak values for either polarity. The rated current values may be applied either to the Ring
to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied
simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair).
3. Values for V
GG
= -120 V. For values at other voltages see Figure 4. Above 25
°
C, derate linearly to zero at 150
°
C lead
temperature.
The TISPPBL3 is a dual forward-conducting buffered p-gate overvoltage protector. It is designed to protect the Ericsson Microelectronics
SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction.
The TISPPBL3 limits voltages that exceed the referenced SLIC supply rail levels.
The SLIC line driver section is typically powered by a negative voltage, VBat, in the region of -10 V to -90 V. The protector gate is connected to
this negative supply. This references the protection (clipping) voltage to the negative supply voltage. As the protection voltage will track the
negative supply voltage, the overvoltage stress on the SLIC is minimized. The TISPPBL3 buffered gate design reduces the loading on the SLIC
supply during overvoltages caused by power cross and induction.
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative
supply rail value. If sufficient current is available from the overvoltage, then the protector will crowbar into a low voltage ground referenced
on-state condition. As the overvoltage subsides, the high holding current of the crowbar prevents d.c. latchup.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system
operation they are virtually transparent. The TISPPBL3 has an 8-pin plastic small-outline surface mount package, D suffix, and is a universal
substitute for TISPPBL1D and TISPPBL2D devices.
Recommended Operating Conditions
Absolute Maximum Ratings, -40
°
C
≤
TA
≤
85
°
C (Unless Otherwise Noted)
TISPPBL3 Programmable Protector
Description
See Figure 10
Min
100
40
25
10
Typ
220
Max
Unit
nF
C1
Gate decoupling capacitor
Series resistance for GR-1089-CORE first-level and second-level surge survival
Series resistance for GR-1089-CORE first-level surge survival
Series resistance for ITU-T recommendation K.20, K.21 and K.45 for coordination with a
400 V primary protector
RSA
RSB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TISPPBL3D-S | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) |
| TITAN19244 | Semiconductor Solutions for High Speed Communications and Fiber Optic Applications |
| TL054AIN | ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS |
| TL05 | ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS |
| TL051AMFK | ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISPPBL3D-S | 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL3-S | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL3SE | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL3SE-S | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPTH12000WAH | 制造商:Texas Instruments 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。