參數(shù)資料
型號： TISPPBL1D
廠商： Power Innovations International, Inc.
英文描述： DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS
中文描述： 雙遠期導電的P -門晶閘管愛立信成分SLIC組件
文件頁數(shù)： 3/19頁
文件大?。?/td> 364K
代理商： TISPPBL1D
3
AUGUST 1997 - REVISED DECEMBER 1999
TISPPBL1D, TISPPBL1P TISPPBL2D, TISPPBL2P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
FOR ERICSSON COMPONENTS SLICS
P R O D U C T I N F O R M A T I O N
recommended operating conditions
SEE Figure 18
MIN
TYP
MAX
UNIT
C1
Gate decoupling capacitor
100
220
nF
R1a
R1b
Series resistance for GR-1089-CORE first-level and second-level surge survival
Series resistance for GR-1089-CORE first-level surge survival
Series resistance for ITU-T recommendation K20/21
40
25
10
electrical characteristics, -40 °C
≤
T
A
≤
85 °C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
D
Off-state current
V
D
= V
DRM
, V
GK
= 0
T
J
= -40 °C
T
J
= 85 °C
-5
μA
-50
μA
V
(BO)
Breakover voltage
I
T
= -20 A, 0.5/700 generator, Figure 3 test circuit (See Figure 2)
I
T
= -20 A, 0.5/700 generator, Figure 3 test cir-
cuit (See Figure 2)
-70
V
t
(BR)
Breakdown time
V
(BR)
< -50 V
1
μs
V
F
Forward voltage
I
F
= 5 A, t
w
= 500 μs
3
V
V
FRM
Peak forward recovery
voltage
I
F
= 20 A, 0.5/700 generator, Figure 3 test circuit (See Figure 2)
8
V
t
FR
Forward recovery time
I
F
= 20 A, 0.5/700 generator, Figure 3 test
circuit (See Figure 2)
V
F
> 5 V
V
F
> 1 V
1
10000
μs
I
H
Holding current
I
T
= -1 A, di/dt = 1A/ms, V
GG
= -50 V,
TISPPBL1
TISPPBL2
-105
-150
mA
I
GAS
Gate reverse current
V
GG
= V
GKRM
, V
AK
= 0
T
J
= -40 °C
T
J
= 85 °C
-5
μA
-50
μA
I
GAT
Gate reverse current,
on state
I
T
= -0.5 A, t
w
= 500 μs, V
GG
= -50 V, T
A
= 25 °C
-1
mA
I
GAF
Gate reverse current,
forward conducting
state
I
F
= 1 A, t
w
= 500 μs, V
GG
= -50 V, T
A
= 25 °C
-10
mA
I
GT
V
GT
Gate trigger current
I
T
= -5 A, t
p(g)
≥
20 μs, V
GG
= -50 V, T
A
= 25 °C
I
T
= -5 A, t
p(g)
≥
20 μs, V
GG
= -50 V, T
A
= 25 °C
5
mA
Gate trigger voltage
2.5
V
C
AK
Anode-cathode off-
state capacitance
f = 1 MHz, V
d
= 1 V, I
G
= 0, T
A
= 25 °C
(see Note 3)
V
D
= -3 V
V
D
= -50 V
110
pF
60
pF
NOTE
3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
thermal characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
R
θ
JA
Junction to free air thermal resistance
P
tot
= 0.8 W, T
A
= 25 °C
5 cm
2
, FR4 PCB
D Package
160
°C/W
P Package
100
相關PDF資料
PDF描述
TISPPBL1P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS
TISPPBL2D DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS
TISPPBL2P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS
TISPPBL2SD PROGRAMMABLE OVERVOLTAGE PROTECTORS FOR ERICSSON COMPONENTS PBL 3xxx SLICS
TISPPBL2SDR PROGRAMMABLE OVERVOLTAGE PROTECTORS FOR ERICSSON COMPONENTS PBL 3xxx SLICS
相關代理商/技術參數(shù)
參數(shù)描述
TISPPBL1DR 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL1DR-S 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL1D-S 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL1P 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL1P-S 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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