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參數資料
| 型號： | THN6701B |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF POWER TRANSISTOR |
| 中文描述： | npn型硅鍺射頻功率晶體管 |
| 文件頁數： | 5/6頁 |
| 文件大?。?/td> | 262K |
| 代理商： | THN6701B |
Page 5 of 6
http://www.tachyonics.co.kr
Sept. 2005.
Rev. 1.0
Preliminary Specification
THN6701B
□
Evaluation Board (for FRS at 465 MHz)
FR4 glass epoxy: dielectric constant = 4.5, thickness = 0.8 mm
Evaluation board dimension = 119
ⅹ
50 mm
2
Test condition: CW test, V
CC
= 6.0 V, I
CQ
= 50 mA, f = 465 MHz
□
Test Circuit Schematic Diagram
C1
C2 C3
L1
C4
C5
C8
C7
L2
C6
C9
100 pF (1608, Murata)
C1, C4
C7, C9
0.4 X 1.5 X 6T
(Air Coil)
L2
100 nH (1608, Murata)
L1
18 pF (1608, Murata)
C3
10 pF (1608, Murata)
C2
1 nF (1608, Murata)
C5,C8
15pF (1608, Murata)
C6
Value
Part
V
BB
INPUT
OUTPUT
100 pF
100 pF
1 nF
18 pF
100 pF
15 pF
L2
0.5 X 1.5 X 6T
10 pF
1 nH
V
CC
W=1.3 mm
L=36 mm
W=1.3 mm
L=2.8 mm
W=1.3 mm
L=1.8 mm
1 nF
W=1.3 mm
L=11 mm
W=1.3 mm
L=39 mm
100 pF
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