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參數(shù)資料
| 型號： | THN6701B |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF POWER TRANSISTOR |
| 中文描述： | npn型硅鍺射頻功率晶體管 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 262K |
| 代理商： | THN6701B |
□
Typical Characteristics ( T
A
= 25
℃
, unless otherwise specified)
Page 3 of 6
http://www.tachyonics.co.kr
Sept. 2005.
Rev. 1.0
Preliminary Specification
THN6701B
Collector Current vs.
Base to Emitter Voltage
DC Current Gain
vs. Collector Current
Reverse Transfer Capacitance
vs. Collector to Base Voltage
0
1
2
3
4
5
6
7
8
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
I
B
step = 2 mA
C
C
Collector to Emitter Voltage, V
CE
(V)
Collector Current
vs. Collector to Emitter Voltage
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
100
200
300
400
500
V
CE
= 6 V
C
C
Base to Emitter Voltage, V
BE
(V)
0
2
4
6
8
10
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
R
r
Collector to Base Voltage, V
CB
(V)
10
-3
10
-2
10
-1
10
0
0
25
50
75
100
125
150
V
CE
= 6 V
D
F
Collector Current, I
C
(A)
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