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參數(shù)資料
| 型號(hào)： | THN6701B |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF POWER TRANSISTOR |
| 中文描述： | npn型硅鍺射頻功率晶體管 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 262K |
| 代理商： | THN6701B |
Page 4 of 6
http://www.tachyonics.co.kr
Sept. 2005.
Rev. 1.0
Preliminary Specification
THN6701B
Output Power or Power Gain Collector Current or Collector Efficiency
vs. Input Power
35
P
OUT
(dBm)
60
≥
10
6
465
CW, class-AB
η
C
(%)
G
P
(dB)
V
CE
(V)
f (MHz)
Operation Mode
vs. Input Power
□
Application Information
RF performance at T
S
≤
60
℃
in common emitter configuration
0
5
10
15
20
25
30
10
15
20
25
30
35
40
6
8
10
12
14
16
18
O
O
Input Power, P
IN
(dBm)
P
OUT
f = 465 MHz, V
CC
= 6 V, I
CQ
= 50 mA
P
G
P
0
5
10
15
20
25
30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
10
20
30
40
50
60
70
80
f = 465 MHz, V
CC
= 6 V, I
CQ
= 50 mA
η
C
I
C
C
C
Input Power, P
IN
(dBm)
η
C
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