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參數(shù)資料
| 型號： | THN6601B |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF TRANSISTOR |
| 中文描述： | npn型硅鍺射頻晶體管 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 289K |
| 代理商： | THN6601B |
Page 4 of 7
http://www.tachyonics.co.kr
July 2005.
Rev. 1.0
Specification
THN6601B
Collector Current
vs. Collector to Emitter Voltage
Gain Bandwidth Product
vs. Collector Current
Insertion Power Gain
vs. Collector Current
10
100
1000
0
2
4
6
8
10
12
I
2
|
2
Collector Current, I
C
(mA)
V
CE
= 5 V
V
CE
= 7 V
f = 1 GHz
10
100
1000
0
2
4
6
8
10
12
14
16
18
20
M
Collector Current, I
C
(mA)
V
CE
= 5 V
V
= 7 V
f = 1 GHz
Maximum Available Gain
vs. Collector Current
10
100
1000
0
2
4
6
8
10
G
T
Collector Current, I
C
(mA)
V
CE
= 5 V
V
CE
= 7 V
0
1
2
3
4
5
6
7
8
9
10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
I
B
step = 1.8 mA
C
C
Collector to Emitter Voltage, V
CE
(V)
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|---|---|
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