參數(shù)資料
型號: THN6601B
廠商: Tachyonics CO,. LTD.
英文描述: NPN SiGe RF TRANSISTOR
中文描述: npn型硅鍺射頻晶體管
文件頁數(shù): 2/7頁
文件大?。?/td> 289K
代理商: THN6601B
Electrical Characteristics
(T
A
= 25
)
Page 2 of 7
http://www.tachyonics.co.kr
July 2005.
Rev. 1.0
Specification
THN6601B
dB
12
9
V
CE
= 7 V, I
C
= 100 mA, f = 1 GHz
dB
11
8
V
CE
= 5 V, I
C
= 100 mA, f = 1 GHz
MAG
Maximum Available Gain
dB
7
5
V
CE
= 5 V, I
C
= 100 mA, f = 1 GHz
|S
21
|
2
Insertion Power Gain
GHz
7.0
5
V
CE
= 7 V, I
C
= 100 mA
300
50
V
CE
= 5 V, I
C
= 100 mA
h
FE
DC Current Gain
GHz
6
4
V
CE
= 5 V, I
C
= 100 mA
f
T
Gain Bandwidth Product
dB
7
5
V
CE
= 7 V, I
C
= 100 mA, f = 1 GHz
0.5
V
CB
= 19 V, I
E
= 0 mA
I
CBO
Collector Cut-off Current
10
V
CE
= 12 V, I
B
= 0 mA
I
CEO
0.5
V
EB
= 1.5 V, I
C
= 0 mA
I
EBO
Emitter Cut-off Current
1.9
Typ.
Max.
pF
V
CB
= 6 V, I
E
= 0 mA, f = 1 MHz
C
re
Reverse Transfer Capacitance
Unit
Min.
Test Conditions
Symbol
Parameter
h
FE
Classification
170 - 300
50 - 200
h
FE
Value
R1601
·
R1601
Marking
Thermal Characteristics
K/W
55
P
tot
= 1.5 W; T
S
= 60
; note 1
Thermal resistance from junction
to soldering point
R
th
j-s
Unit
Value
Condition
Parameter
Symbol
Note 1. T
S
is the temperature at the soldering point of the collector pin.
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