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參數(shù)資料
| 型號(hào)： | THN6601B |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF TRANSISTOR |
| 中文描述： | npn型硅鍺射頻晶體管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 289K |
| 代理商： | THN6601B |
□
Features
- High gain bandwidth product
f
T
= 7 GHz
- High power gain
|S
21
|
2
= 7 dB @ V
CE
= 5 V, I
C
= 100 mA, f = 1 GHz
- High power
P
OUT
= 32 dBm (1.5 W) @ V
CE
= 6 V, I
CQ
= 5 mA, f = 465 MHz
□
Applications
- UHF and VHF wide band amplifier
Page 1 of 7
http://www.tachyonics.co.kr
July 2005.
Rev. 1.0
NPN SiGe RF TRANSISTOR
Specification
THN6601B
□
Absolute Maximum Ratings
(T
A
= 25
℃
)
PIN CONFIGURATION
1. Emitter
2. Base
3. Emitter
4. Collector
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
150
℃
I
C
500
mA
W
Unit
BV
CBO
20
V
Parameter
Symbol
P
tot
1.5
Ratings
℃
T
stg
-65 ~ 150
V
BV
EBO
3
V
BV
CEO
12
T
j
SOT223
Unit in mm
6.5
7
3.0
3
1
2
3
4
2.3
4.6
0.7
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