參數(shù)資料
型號(hào): THN6501E
廠商: Tachyonics CO,. LTD.
英文描述: NPN SiGe RF TRANSISTOR
中文描述: npn型硅鍺射頻晶體管
文件頁數(shù): 4/15頁
文件大?。?/td> 242K
代理商: THN6501E
THN6501 Series
Maximum Available Gain, MAG vs. Frequency
Insertion Power Gain, |S
21
|
2
vs. Frequency
Maximum Available Gain, MAG vs. I
C
Transition Frequency, f
T
vs. I
C
12
13
14
15
16
17
18
0
5
10 15 20 25 30 35 40 45 50 55 60 65
I
C
[mA]
M
0
2
4
6
8
10
12
0
10
20
30
40
50
60
70
f
T
0.5
1.0
1.5
2.0
2.5
0.0
3.0
8
10
12
14
16
18
20
22
6
24
freq, GHz
M
T
0.5
1.0
1.5
2.0
2.5
0.0
3.0
4
6
8
10
12
14
16
18
2
20
freq, GHz
d
d
f = 1 GHz
V
CE
= 6 V
I
C
= 15 mA
M
|
2
|
2
[
V
CE
= 6 V
V
CE
= 3 V
I
C
= 15 mA
V
CE
= 6 V
I
C
= 15 mA
V
CE
= 3 V
I
C
= 15 mA
V
CE
= 3 V
V
CE
= 2 V
V
CE
= 6
V
CE
= 3
V
CE
= 2
V
CE
= 8
Frequency [GHz]
Frequency [GHz]
I
C
[mA]
www.tachyonics.co.kr
- 4/15 -
Aug.-2005
Rev 2.0
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