參數資料
型號： THM1001TE
廠商： Tachyonics CO,. LTD.
英文描述： SiGe HBT MMIC POWER AMPLIFIER
中文描述： 硅鍺HBT MMIC功率放大器
文件頁數： 4/9頁
文件大?。?/td> 147K
代理商： THM1001TE
Page 4
60
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-
Seoul, Korea. 153
-
-
8,
Gasan
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-
dong,
Kumchun
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-
023
Gu
http://
www.tachyonics.co.kr
Rev. 1.1
THM1001TE
AC Electrical Characteristics
Condition : V
CC0
=V
CC1
=V
CC2
=V
RAMP
=3.3V, PIN=+2dBm, T
A
=25
Input and Output externally matched to 50
, f=2.45GHz,
unless otherwise noted.
Symbol
Note
Parameter
Min.
Typ.
Max.
Unit
G
VAR
3
Gain Variation over band (2400-2500
MHz)
0.7
1.0
dB
2f,3f,4f,5f
3, 4
Harmonics
35
30
dBc
|S
21
|
OFF
2
Isolation in “OFF” State, P
IN
=+2dBm,
V
RAMP
=0V
35
dB
|S
12
|
2
Reverse Isolation
34
dB
fL-U
3
Frequency Range
2400 ~ 2500
MHz
1
Output Power @P
IN
= +2dBm, V
CTL
=3.3V
22
23
dBm
1
Output Power @P
IN
=+2dBm, V
CTL
=0.4V
-20
-10
dBm
Ptemp
3
Output Power Variation over temperature
(-40
<TA<+85
)
TBD
dB
dP
OUT
/dV
CTL
3
Control Voltage Sensitivity
120
dBm/V
PAE
Power Added Efficiency at +23dBm
Output Power
44
%
G
3
Gain @ P
IN
= -20dBm
Gain @ P
IN
= -10dBm
25
24
26
25
dB
dB
STAB
2
Stability (P
IN
=+2dBm, Load VSWR=6:1)
All non-harmonically
Related outputs less than –50dBc
Pout
Notes : (1) Guaranteed by production test at T
A
=25
(2) Guaranteed by design only
(3) Guaranteed by design and characterization
(4) Harmonic levels are greatly affected by topology of external matching networks.
.
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