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參數(shù)資料
| 型號： | TEA1103T-T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 0.014 A BATTERY CHARGE CONTROLLER, 200 kHz SWITCHING FREQ-MAX, PDSO20 |
| 封裝： | 7.50 MM, PLASTIC, MS-013AC, SOT-163-1, SOP-20 |
| 文件頁數(shù)： | 8/28頁 |
| 文件大?。?/td> | 218K |
| 代理商： | TEA1103T-T |
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1999 Jan 27
16
Philips Semiconductors
Preliminary specication
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
Output drivers; AO, LS and PWM
IAO(source)
analog output source current
VAO = 3 V (p-p);
VLS = 2.8 V
9
0mA
IAO(sink)
analog output sink current
VAO = 3 V (p-p);
VLS = 1.2 V
50
A
gm1
transconductance of amplier
A1
VIB =50mV
250
A/V
Gv1,2
voltage gain of ampliers
A1 and A2
VAO = 3 V (p-p)
72
dB
Gv2
voltage gain of amplier A2
VAO = 2 V (p-p)
11
dB
ILS(source)
maximum source current
(pin LS)
VLS = 2.25 V
25
21
16
A
ILS(sink)
maximum sink current
(pin LS)
VLS = 2.25 V
16
21
25
A
IOH(PWM)
HIGH level output current
VPWM =3V
19
15
11
mA
IOL(PWM)
LOW level output current
VPWM = 0.7 V
1014
18mA
δ
PWM
maximum duty factor
79
%
Battery monitor; Vbat
IVbat
battery monitor input current
Vbat = 1.85 V
1
nA
Vbat
voltage range of Vpeak
detection
0.3
2V
V
bat/Vbat
Vpeak detection level with
respect to top level
Vbat = 1.85 V;
Tj = 0 to 50 °C
0.25
%
Vbat
voltage resolution for Vpeak
0.6
mV
Protections; Vbat
Vbat(l)
maximum voltage at pin Vbat
for detecting low battery
voltage
0.25
0.30
0.35
V
Oscillator; pin OSC
Vosc(H)
HIGH level oscillator switching
voltage
2.5
V
Vosc(L)
LOW level oscillator switching
voltage
1.5
V
fosc(min)
minimum oscillator frequency
Rref = 125 k;
Cosc = 400 pF
20.9
23
25.1
kHz
fosc(max)
maximum oscillator frequency
Rref = 12.5 k;
Cosc = 400 pF
158
174
190
kHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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