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參數(shù)資料
| 型號： | TEA1103T-T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 0.014 A BATTERY CHARGE CONTROLLER, 200 kHz SWITCHING FREQ-MAX, PDSO20 |
| 封裝： | 7.50 MM, PLASTIC, MS-013AC, SOT-163-1, SOP-20 |
| 文件頁數(shù)： | 6/28頁 |
| 文件大?。?/td> | 218K |
| 代理商： | TEA1103T-T |
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1999 Jan 27
14
Philips Semiconductors
Preliminary specication
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
Isource(max)
maximum source current
VIB =75mV; VP =10V
VRFSH = 2.7 V;
Tamb =25 °C
1.4
2
2.6
mA
VRFSH(max)
maximum refresh voltage
IRFSH = 1 mA
2.7
V
VRFSH(off)
voltage at pin RFSH when
refresh is off
700
770
840
mV
Temperature related inputs; pins NTC and MTV
VNTCh
input voltage at pin NTC for
detecting high temperature
pin MTV open-circuit
0.9
1
1.1
V
MTV setting
0.95MTV MTV
1.05MTV V
VNTCh(hy)
hysteresis of VNTCh
80
mV
VNTCl
input voltage at pin NTC,
detecting low temperature
2.7
2.8
2.9
V
VNTCl(hy)
hysteresis of VNTCl
75
mV
VNTC(co)
input voltage at pin NTC for
detecting temperature cut-off
0.7MTV
0.75MTV
0.8MTV
V
VNTC(bat)
maximum input voltage at
pin NTC for detecting battery
with NTC
3.22
3.3
3.38
V
INTC
input current at pin NTC
VNTC =2V
5
+5
A
VMTV
voltage level at pin MTV
default (open-circuit)
0.95
1
1.05
V
0.5
2.5
V
NTC/VNTC
T/t detection level
VNTC =2V; Tj = 0 to 50 °C
0.25
%
Voltage regulation
Vreg
regulation voltage
NiCd and NiMH;
pin Vstb open-circuit
1.34
1.325
1.40
V
NiCd and NiMH;
Vstb = 1.5 V
0.99Vstb
Vstb
1.01Vstb
V
open battery
1.86
1.9
1.94
V
TCVreg
temperature coefcient of
regulation voltage
Vreg = 1.325 V;
Tamb =0to45 °C
0
±60
±120
ppm/K
gm
transconductance of amplier
A3
Vbat = 1.9 V;
no battery mode
2.0
mA/V
Program pin Vstb
Vstb
open voltage at pin Vstb
1.30
1.325
1.35
V
Vstb(im)
voltage at pin Vstb for
programming inhibit mode
0
0.8
V
Vstb(st)
voltage at pin Vstb for
programming voltage
regulation at standby
NiCd and NiMH
1.0
2.2
V
Vstb(tc)
voltage at pin Vstb for
programming trickle charge at
standby
NiCd and NiMH
2.6
VS
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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