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參數(shù)資料
| 型號： | TEA1099 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer |
| 中文描述： | 語音輔助輸入和免提集成電路/輸出和模擬多路復(fù)用器 |
| 文件頁數(shù)： | 26/40頁 |
| 文件大?。?/td> | 185K |
| 代理商： | TEA1099 |
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1999 Apr 08
26
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
G
v(mute)
gain reduction if not activated
HFC = LOW;
MUTT = LOW;
MUTR = LOW;
AUXC = LOW
60
80
dB
RX
EARPIECE AMPLIFIER
(
PINS
GARX
AND
QR); note 1
G
v(RECO-QR)
gain voltage range between pins
RECO and QR
V
QR(rms)(max)
maximum output voltage on QR
(RMS value)
V
no(QR)(rms)
noise output voltage at pin QR;
pin IR is an open-circuit (RMS
value)
3
+15
dB
sine wave drive;
R
L
= 150
; THD < 2%
G
v(QR)
= 0 dB;
psophometrically
weighted (p53 curve)
0.75
0.9
V
88
dBVp
RX
AMPLIFIER USING
RAUX (
PINS
RAUX
AND
RECO); note 1
G
v(RAUX-RECO)
voltage gain from pin RAUX to
RECO
gain variation with frequency
referenced to 1 kHz
gain variation with temperature
referenced to 25
°
C
maximum input voltage on RAUX
(RMS value)
noise output voltage at pin RECO;
pin RAUX shorted to GND
through 200
in series with
10
μ
F (RMS value)
gain reduction if not activated
V
RAUX
= 0.4 V (RMS)
3.7
2.4
1.1
dB
G
v(f)
f = 300 to 3400 Hz
±
0.25
dB
G
v(T)
T
amb
=
25 to +75
°
C
±
0.25
dB
V
RAUX(rms)
THD = 2%
0.95
V
V
no(RECO)(rms)
psophometrically
weighted (p53 curve)
100
dBVp
G
v(mute)
HFC = LOW;
MUTT = LOW;
MUTR = LOW;
AUXC = LOW
60
80
dB
Auxiliary amplifiers using AUXO
TX
AUXILIARY AMPLIFIER USING
MIC+
AND
MIC
(
PINS
MIC+, MIC
AND
AUXO); note 1
G
v(MIC-AUXO)
voltage gain from pin MIC+/MIC
to AUXO
G
v(f)
gain variation with frequency
referenced to 1 kHz
G
v(T)
gain variation with temperature
referenced to 25
°
C
V
MIC(rms)
maximum input voltage on
MIC+/MIC
(RMS value)
V
no(AUXO)
noise output voltage at pin AUXO;
pins MIC+/MIC
shorted to
GNDTX through 200
in series
with 10
μ
F (RMS value)
V
MIC
= 10 mV (RMS)
24.2
25.5
26.8
dB
f = 300 to 3400 Hz
±
0.1
dB
T
amb
=
25 to +75
°
C
±
0.3
dB
THD = 2%
16
mV
psophometrically
weighted (p53 curve)
91
dBVp
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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