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參數(shù)資料
| 型號： | TEA1099 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer |
| 中文描述： | 語音輔助輸入和免提集成電路/輸出和模擬多路復用器 |
| 文件頁數(shù)： | 24/40頁 |
| 文件大?。?/td> | 185K |
| 代理商： | TEA1099 |
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1999 Apr 08
24
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
TX amplifiers
TX
HANDSET MICROPHONE AMPLIFIER
(
PINS
MIC+, MIC
AND
LN); note 1
G
v(MIC-LN)
voltage gain from pin MIC+/MIC
to LN
G
v(f)
gain variation with frequency
referenced to 1 kHz
G
v(T)
gain variation with temperature
referenced to 25
°
C
CMRR
common mode rejection ratio
THD
total harmonic distortion at LN
V
MIC
= 5 mV (RMS)
43.3
44.3
45.3
dB
f = 300 to 3400 Hz
±
0.25
dB
T
amb
=
25 to +75
°
C
±
0.25
dB
80
2
10
dB
%
%
V
LN
= 1.4 V (RMS)
I
line
= 4 mA;
V
LN
= 0.12 V (RMS)
psophometrically
weighted (p53 curve)
V
no(LN)
noise output voltage at pin LN;
pins MIC+/MIC
shorted through
200
gain reduction if not activated
77.5
dBmp
G
v(mute)
HFC = LOW;
MUTT = LOW;
MUTR = LOW;
AUXC = LOW;
60
80
dB
DTMF
AMPLIFIER
(
PINS
DTMF, LN
AND
RECO); note 1
G
v(DTMF-LN)
G
v(f)
voltage gain from pin DTMF to LN V
DTMF
= 50 mV (RMS)
gain variation with frequency
referenced to 1 kHz
gain variation with temperature
referenced to 25
°
C
gain reduction if not activated
24.35 25.35
26.35
dB
dB
f = 300 to 3400 Hz
±
0.25
G
v(T)
T
amb
=
25 to +75
°
C
±
0.25
dB
G
v(mute)
HFC = LOW;
MUTT = HIGH;
MUTR = HIGH;
AUXC = LOW
V
DTMF
= 50 mV (RMS)
60
80
dB
G
v(DTMF-RECO)
voltage gain from pin DTMF to
RECO
16.5
dB
TX
AUXILIARY AMPLIFIER USING
TXAUX (
PINS
TXAUX
AND
LN); note 1
G
v(TXAUX-LN)
voltage gain from pin TXAUX to
LN
gain variation with frequency
referenced to 1 kHz
gain variation with temperature
referenced to 25
°
C
total harmonic distortion at LN
maximum input voltage at TXAUX
(RMS value)
noise output voltage at pin LN; pin
TXAUX shorted to GND through
200
in series with 10
μ
F
V
TXAUX
= 0.1 V (RMS)
11.5
12.5
13.5
dB
G
v(f)
f = 300 to 3400 Hz
±
0.25
dB
G
v(T)
T
amb
=
25 to +75
°
C
±
0.25
dB
THD
V
TXAUX(rms)
V
LN
= 1.4 V (RMS)
I
line
= 70 mA; THD = 2%
1.2
2
%
V
V
no(LN)
psophometrically
weighted (p53 curve)
80.5
dBmp
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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|---|---|
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| TEA1101 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Battery monitor for Nicd and NiMH chargers |
| TEA1101T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Battery monitor for Nicd and NiMH chargers |
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