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參數(shù)資料
| 型號： | TE28F800C3T110 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 中文描述： | 3伏高級啟動塊8 - ，16 - ，32 - Mbit閃存家庭 |
| 文件頁數(shù)： | 5/59頁 |
| 文件大?。?/td> | 384K |
| 代理商： | TE28F800C3T110 |
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E
1.0
3 VOLT ADVANCED+ BOOT BLOCK
5
PRODUCT PREVIEW
INTRODUCTION
This document contains the specifications for the
3 Volt Advanced+ Boot Block flash memory family.
These flash memories add features which can be
used to enhance the security of systems: instant
block locking and a protection register.
Throughout this document, the term
“2.7 V” refers
to the full voltage range 2.7 V–3.6 V (except where
noted otherwise) and “V
PP
=
12 V” refers to 12 V
±5%. Sections 1 and 2 provide an overview of the
flash memory family including applications, pinouts,
pin descriptions and memory organization. Section
3 describes the operation of these products. Finally,
Section 4 contains the operating specifications.
1.1
3 Volt Advanced+ Boot Block
Flash Memory Enhancements
The 3 Volt Advanced+ Boot Block flash memory
features:
Zero-latency, flexible block locking
128-bit Protection Register
Simple
system
implementation
production programming with 2.7 V in-field
programming
Ultra-low power operation at 2.7 V
Minimum 100,000 block erase cycles
Common Flash Interface for software query of
device specs and features
for
12 V
Table 1. 3 Volt Advanced+ Boot Block Feature Summary
Feature
8 M
(2)
16 M
32 M
(1)
8 M
(2)
16 M
32 M
Reference
V
CC
Operating Voltage
2.7 V – 3.6 V
Table 8
V
PP
Voltage
Provides complete write protection with
optional 12V Fast Programming
Table 8
V
CCQ
I/O Voltage
2.7 V– 3.6 V
Note 3
Bus Width
8-bit
16-bit
Table 2
Speed (ns)
90, 110 @ 2.7 V and 80, 100 @ 3.0 V
Table 11
Blocking (top or bottom)
8 x 8-Kbyte parameter
4-Mb: 7 x 64-Kbyte main
8-Mb: 15 x 64-Kbyte main
16-Mb: 31 x 64-Kbyte main
32-Mb: 63 x 64-Kbyte main
8 x 4-Kword parameter
4-Mb: 7 x 32-Kword main 8-
Mb: 15 x 32-Kword main
16-Mb: 31 x 32-Kword main
32-Mb: 63 x 32-Kword main
Section 2.2
Appendix E and F
Operating Temperature
Extended: –40 °C to +85 °C
Table 8
Program/Erase Cycling
100,000 cycles
Table 8
Packages
40-Lead TSOP
(1)
48-Ball
μ
BGA* CSP
(2)
48-Lead TSOP
48-Ball
μ
BGA* CSP
(2)
Figures 1, 2, 3,
and 4
Block Locking
Flexible locking of any block with zero latency
Section 3.3
Protection Register
64-bit unique device number, 64-bit user programmable
Section 3.4
NOTES:
1.
2.
3.
32-Mbit density not available in 40-lead TSOP.
8-Mbit density not available in μBGA* CSP.
V
CCQ
operation at 1.65 V — 2.5 V available upon request.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TE28F320S3-100 | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| TE28F160S3-100 | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| TE28F320S3-120 | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| TE28F160S3-120 | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| TE28F400B3T90 | 3 Volt Advanced Boot Block Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F800C3T90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F800C3TA110 | 制造商:Intel 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 512K x 16 110ns 48-Pin TSOP 制造商:Micron Technology Inc 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 512K x 16 110ns 48-Pin TSOP |
| TE28F800C3TA70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| TE28F800C3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| TE28F800C3TC70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
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