參數資料
型號: TE28F800C3T110
廠商: Intel Corp.
英文描述: 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述: 3伏高級啟動塊8 - ,16 - ,32 - Mbit閃存家庭
文件頁數: 35/59頁
文件大?。?/td> 384K
代理商: TE28F800C3T110
E
4.8
3 VOLT ADVANCED+ BOOT BLOCK
35
PRODUCT PREVIEW
Reset Operations
IH
V
IL
V
RP# (P)
PLPH
t
IH
V
IL
V
RP# (P)
PLPH
t
(A) Reset during Read Mode
Abort
Complete
PLRH
PHQV
PHWL
PHEL
t
t
t
PHQV
PHWL
PHEL
t
t
t
(B) Reset during Program or Block Erase, <
PLPH
PLRH
t
t
IH
V
IL
V
RP# (P)
PLPH
t
Abort
Complete
PHQV
PHWL
PHEL
t
t
t
PLRH
t
Deep
Power-
Down
(C) Reset Program or Block Erase, >
PLPH
PLRH
t
Figure 11. AC Waveform: Reset Operation
Table 11. Reset Specifications
(1)
V
CC
2.7V
–3.6V
Symbol
Parameter
Notes
Min
Max
Unit
t
PLPH
RP# Low to Reset during Read
(If RP# is tied to V
CC
, this specification is not
applicable)
2,4
100
ns
t
PLRH1
t
PLRH2
NOTES:
1.
2.
3.
4.
RP# Low to Reset during Block Erase
3,4
22
μs
RP# Low to Reset during Program
3,4
12
μs
See Section 3.1.4 for a full description of these conditions.
If t
PLPH
is < 100 ns the device may still reset but this is not guaranteed.
If RP# is asserted while a block erase or
word program operation is not executing, the reset will complete within 100 ns.
Sampled, but not 100% tested.
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