參數(shù)資料
型號(hào)： TE28F800C3T110
廠商： Intel Corp.
英文描述： 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述： 3伏高級(jí)啟動(dòng)塊8 - ，16 - ，32 - Mbit閃存家庭
文件頁(yè)數(shù)： 3/59頁(yè)
文件大?。?/td> 384K
代理商： TE28F800C3T110
E
3 VOLT ADVANCED+ BOOT BLOCK
3
PRODUCT PREVIEW
CONTENTS
PAGE
PAGE
1.0 INTRODUCTION .............................................5
1.1 3 Volt Advanced+ Boot Block Flash Memory
Enhancements............................................5
1.2 Product Overview.........................................6
2.0 PRODUCT DESCRIPTION..............................6
2.1 Package Pinouts..........................................6
2.2 Block Organization.....................................10
2.2.1 Parameter Blocks................................10
2.2.2 Main Blocks.........................................10
3.0 PRINCIPLES OF OPERATION .....................11
3.1 Bus Operation............................................11
3.1.1 Read....................................................11
3.1.2 Output Disable.....................................11
3.1.3 Standby...............................................11
3.1.4 Reset...................................................12
3.1.5 Write....................................................12
3.2 Modes of Operation....................................12
3.2.1 Read Array..........................................12
3.2.2 Read Configuration..............................13
3.2.3 Read Status Register ..........................13
3.2.3.1 Clearing the Status Register.........13
3.2.4 Read Query.........................................13
3.2.5 Program Mode.....................................14
3.2.5.1 Suspending and Resuming
Program.......................................14
3.2.6 Erase Mode.........................................14
3.2.6.1 Suspending and Resuming Erase.15
3.3 Flexible Block Locking................................19
3.3.1 Locking Operation ...............................19
3.3.2 Locked State .......................................19
3.3.3 Unlocked State....................................19
3.3.4 Lock-Down State.................................19
3.3.5 Reading a Block’s Lock Status ............20
3.3.6 Locking Operations during Erase
Suspend.............................................20
3.3.7 Status Register Error Checking ...........20
3.4 128-Bit Protection Register.........................21
3.4.1 Reading the Protection Register..........21
3.4.2 Programming the Protection Register..21
3.4.3 Locking the Protection Register...........22
3.5 V
PP
Program and Erase Voltages...............22
3.5.1 Easy-12 V Operation for Fast
Manufacturing Programming...............22
3.5.2 V
PP
≤
V
PPLK
for Complete Protection ...22
3.5.3 V
PP
Usage...........................................22
3.6 Power Consumption...................................23
3.6.1 Active Power (Program/Erase/Read)...23
3.6.2 Automatic Power Savings (APS) .........23
3.6.3 Standby Power....................................23
3.6.4 Deep Power-Down Mode.....................24
3.7 Power-Up/Down Operation.........................24
3.7.1 RP# Connected to System Reset ........24
3.7.2 V
CC
, V
PP
and RP# Transitions.............24
3.8 Power Supply Decoupling ..........................24
4.0 ABSOLUTE MAXIMUM RATINGS................25
4.2 Operating Conditions..................................25
4.3 Capacitance...............................................26
4.4 DC Characteristics .....................................26
4.5 AC Characteristics—Read Operations—
Extended Temperature..............................30
4.6 AC Characteristics—Write Operations—
Extended Temperature..............................32
4.7 Erase and Program Timings.......................33
4.8 Reset Operations .......................................35
5.0 ORDERING INFORMATION..........................36
6.0 ADDITIONAL INFORMATION.......................37
APPENDIX A: WSM Current/Next States..........38
APPENDIX B: Program/Erase Flowcharts........40
APPENDIX C: Common Flash Interface Query
Structure......................................................46
相關(guān)PDF資料
PDF描述
TE28F320S3-100 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
TE28F160S3-100 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
TE28F320S3-120 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
TE28F160S3-120 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
TE28F400B3T90 3 Volt Advanced Boot Block Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F800C3T90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F800C3TA110 制造商:Intel 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 512K x 16 110ns 48-Pin TSOP 制造商:Micron Technology Inc 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 512K x 16 110ns 48-Pin TSOP
TE28F800C3TA70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
TE28F800C3TA90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
TE28F800C3TC70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*