參數(shù)資料
型號: TE28F800B3B110
廠商: INTEL CORP
元件分類: DRAM
英文描述: SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述: 512K X 16 FLASH 2.7V PROM, 110 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數(shù): 49/55頁
文件大?。?/td> 638K
代理商: TE28F800B3B110
E
4.12
2-MBIT SmartVoltage BOOT BLOCK FAMILY
49
SEE NEW DESIGN RECOMMENDATIONS
AC Characteristics
—Read Only Operations
(1)
—Extended Temperature
Prod
TBV-80
TBV-80
TBE-120
Symbol
Parameter
V
CC
3.3 ± 0.3 V
(5)
5 V ± 10%
(6)
Unit
Load
50 pF
100 pF
Notes
Min
Max
Min
Max
t
AVAV
Read Cycle Time
110
80
ns
t
AVQV
Address to Output Delay
110
80
ns
t
ELQV
CE# to Output Delay
2
110
80
ns
t
PHQV
RP# to Output Delay
0.8
0.45
μ
s
t
GLQV
OE# to Output Delay
2
65
40
ns
t
ELQX
CE# to Output in Low Z
3
0
0
ns
t
EHQZ
CE# to Output in High Z
3
45
25
ns
t
GLQX
OE# to Output in Low Z
3
0
0
ns
t
GHQZ
OE# to Output in High Z
3
45
25
ns
t
OH
Output Hold from Address, CE#,
or OE# Change, Whichever
Occurs First
3
0
0
ns
t
ELFL
t
ELFH
CE# Low to BYTE# High or Low
3
0
0
ns
t
AVFL
t
FLQV
t
FHQV
Address to BYTE# High or Low
3
5
5
ns
BYTE# to Output Delay
3,4
110
80
ns
t
FLQZ
BYTE# Low to Output in High Z
3
45
30
ns
t
PLPH
Reset Pulse Width
7
150
60
ns
t
PLQZ
RP# Low to Output High-Z
150
60
ns
NOTES:
1. See AC Input/Output Reference Waveform for timing measurements.
2. OE# may be delayed up to t
CE
–t
OE
after the falling edge of CE# without impact on t
CE
.
3. Sampled, but not 100% tested.
4. t
FLQV
, BYTE# switching low to valid output delay will be equal to t
AVQV
, measured from the time DQ
15
/A
–1
becomes valid.
5. See Test Configuration(Figure 21), 3.6 V and 3.3
±
0.3 V Standard Test component values.
6. See Test Configuration(Figure 21), 5 V Standard Test component values.
7. The specification t
PLPH
is the minimum time that RP# must be held low in order to product a valid reset of the device.
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