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參數(shù)資料
| 型號： | TE28F800B3B110 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 中文描述： | 512K X 16 FLASH 2.7V PROM, 110 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數(shù)： | 18/55頁 |
| 文件大小： | 638K |
| 代理商： | TE28F800B3B110 |
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2-MBIT SmartVoltage BOOT BLOCK FAMILY
E
18
SEE NEW DESIGN RECOMMENDATIONS
Table 6. Command Codes and Descriptions
Code
Device Mode
Description
00
Invalid/
Reserved
Unassigned commands that should not be used. Intel reserves the right to redefine
these codes for future functions.
FF
Read Array
Places the device in read array mode, so that array data will be output on the data
pins.
40
Program
Set-Up
Sets the CUI into a state such that the next write will latch the Address and Data
registers on the rising edge and begin the program algorithm. The device then
defaults to the read status mode, where the device outputs status register data
when OE# is enabled. To read the array, issue a Read Array command.
To cancel a program operation after issuing a Program Set-Up command, write all
1’s (FFH for x8, FFFFH for x16)
to the CUI. This will return to read status register
mode after a standard program time without modifying array contents. If a program
operation has already been initiated to the WSM this command cannot cancel that
operation in progress.
10
Alternate
Prog Set-Up
(See 40H/Program Set-Up)
20
Erase
Set-Up
Prepares the CUI for the Erase Confirm command. If the next command is not an
Erase Confirm command, then the CUI will set both the Program Status (SR.4) and
Erase Status (SR.5) bits of the status register to a “1,” place the device into the
read status register state, and wait for another command without modifying array
contents. This can be used to cancel an erase operation after the Erase Set-Up
command has been issued. If an operation has already been initiated to the WSM
this can not cancel that operation in progress.
D0
Erase
Resume/
Erase
Confirm
If the previous command was an Erase Set-Up command, then the CUI will latch
address and data, and begin erasing the block indicated on the address pins.
During erase, the device will respond only to the Read Status Register and Erase
Suspend commands and will output status register data when OE# is toggled low.
Status register data is updated by toggling either OE# or CE# low.
B0
Erase
Suspend
Valid only while an erase operation is in progress and will be ignored in any other
circumstance. Issuing this command will begin to suspend erase operation. The
status register will indicate when the device reaches erase suspend mode. In this
mode, the CUI will respond only to the Read Array, Read Status Register, and
Erase Resume commands and the WSM will also set the WSM Status bit to a “1”
(ready). The WSM will continue to idle in the SUSPEND state, regardless of the
state of all input control pins except RP#, which will immediately shut down the
WSM and the remainder of the chip, if it is made active. During a suspend
operation, the data and address latches will remain closed, but the address pads
are able to drive the address into the read path. See Section 3.3.4.1.
70
Read Status
Register
Puts the device into the read status register mode, so that reading the device
outputs status register data, regardless of the address presented to the device.
The device automatically enters this mode after program or erase has completed.
This is one of the two commands that is executable while the WSM is operating.
See Section 3.3.2.
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PDF描述 |
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| TE28F800B3BA110 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F800B3BA90 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F200BV-B80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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| TE28F200BV-T60 | RP30 (EW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 3.3V; 4:1 Wide Input Voltage Range; 30 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x40.6x10.2mm Package; Efficiency to 88% |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F800B3B120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| TE28F800B3-B120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| TE28F800B3B150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| TE28F800B3-B150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| TE28F800B3B90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
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