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參數(shù)資料
| 型號： | TE28F320S3-120 |
| 廠商： | Intel Corp. |
| 英文描述： | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| 中文描述： | 字寬FlashFile⑩Memory系列 |
| 文件頁數(shù)： | 50/52頁 |
| 文件大?。?/td> | 1262K |
| 代理商： | TE28F320S3-120 |
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28F160S3, 28F320S3
E
50
ADVANCE INFORMATION
Table 24. Erase/Write/Lock Performance
(3,4)
3.3V ± 0.3V V
CC
Version
3.3V V
PP
5V V
PP
#
Sym
Parameter
Notes
Typ
(1)
Max
Typ
(1)
Max
Units
W16
Byte/word program time
(using write buffer)
5
5.66
TBD
2.7
TBD
μs
W16
t
WHQV1
t
EHQV1
Per byte program time
(without write buffer)
2
19.51
TBD
12.95
TBD
μs
W16
t
WHQV1
t
EHQV1
Per word program time
(without write buffer)
2
21.75
TBD
12.95
TBD
μs
W16
Block program time
(byte mode)
2
1.6
TBD
0.85
TBD
sec
W16
Block program time
(word mode)
2
0.89
TBD
0.43
TBD
sec
W16
Block program time
(using write buffer)
2
0.36
TBD
0.18
TBD
sec
W16
t
WHQV2
t
EHQV2
Block erase time
2
0.55
TBD
0.41
TBD
sec
W16
Full chip erase time
16 Mbit
17.6
TBD
13.1
TBD
sec
32 Mbit
35.2
TBD
26.2
TBD
sec
W16
t
WHQV3
t
EHQV3
Set Lock-Bit time
2
22.75
TBD
12.95
TBD
μs
W16
t
WHQV4
t
EHQV4
Clear block lock-bits time
2
0.55
TBD
0.41
TBD
sec
W16
t
WHRH1
t
EHRH1
Program suspend latency
time to read
7.1
10
6.6
9.3
μs
W16
t
WHRH2
t
EHRH2
Erase suspend latency time
to read
15.2
21.1
12.3
17.2
μs
NOTES:
1.
Typical values measured at T
= +25°C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
change based on device characterization.
Excludes system-level overhead.
These performance numbers are valid for all speed versions.
Sampled but not 100% tested.
Uses whole buffer.
2.
3.
4.
5.
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