參數(shù)資料
型號(hào)： TE28F320B3BC70
廠商： INTEL CORP
元件分類： DRAM
英文描述： 3 Volt Advanced Boot Block Flash Memory
中文描述： 2M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁數(shù)： 56/58頁
文件大?。?/td> 920K
代理商： TE28F320B3BC70
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
50
3UHOLPLQDU\
0580_E3
Figure 12. Block Erase Flowchart
Start
Write 20H
Write D0H and
Block Address
Read Status Register
SR.7 =
Full Status
Check if Desired
Block Erase Complete
FULL STATUS CHECK PROCEDURE
Bus Operation
Write
Write
Standby
Repeat for subsequent block erasures.
Full Status Check can be done after each block erase or after a sequence of
block erasures.
Write FFH after the last write operation to reset device to read array mode.
Bus Operation
Standby
SR. 1 and 3 MUST be cleared, if set during an erase attempt, before further
attempts are allowed by the Write State Machine.
SR.1, 3, 4, 5 are only cleared by the Clear Staus Register Command, in cases
where multiple bytes are erased before full status is checked.
If an error is detected, clear the status register before attempting retry or other
error recovery.
No
Yes
Suspend Erase
Suspend
Erase Loop
1
0
Standby
Command
Erase Setup
Erase Confirm
Comments
Data = 20H
Addr = Within Block to Be
Erased
Data = D0H
Addr = Within Block to Be
Erased
Check SR.7
1 = WSM Ready
0 = WSM Busy
Command
Comments
Check SR.3
1 = V
PP
Low Detect
Check SR.4,5
Both 1 = Command Sequence
Error
Read Status Register
Data (See Above)
V
PP
Range Error
Command Sequence
Error
Block Erase
Successful
SR.3 =
SR.4,5 =
1
0
1
0
Block Erase Error
SR.5 =
1
0
Attempted Erase of
Locked Block - Aborted
SR.1 =
1
0
Read
Status Register Data Toggle
CE# or OE# to Update Status
Register Data
Standby
Check SR.5
1 = Block Erase Error
Standby
Check SR.1
1 = Attempted Erase of
Locked Block - Erase Aborted
相關(guān)PDF資料
PDF描述
TE28F320B3TA110 3 Volt Advanced Boot Block Flash Memory
TE28F640C3 3 Volt Intel Advanced+ Boot Block Flash Memory
TE28F320C3 3 Volt Intel Advanced+ Boot Block Flash Memory
TE28F004B3B110 3 Volt Advanced Boot Block Flash Memory
TE28F004B3B90 3 Volt Advanced Boot Block Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F320B3BC90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F320B3BD90A 制造商:Micron Technology Inc 功能描述:32MB, ARMAGOSA 48LD TSOP
TE28F320B3T110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F320B3T90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F320B3TA100 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
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