參數(shù)資料
型號(hào)： TE28F320B3BC70
廠(chǎng)商： INTEL CORP
元件分類(lèi)： DRAM
英文描述： 3 Volt Advanced Boot Block Flash Memory
中文描述： 2M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁(yè)數(shù)： 20/58頁(yè)
文件大?。?/td> 920K
代理商： TE28F320B3BC70
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
14
3UHOLPLQDU\
NOTE:
A Command Sequence Error is indicated when both SR.4, SR.5 and SR.7 are set.
3.3
Block Locking
The 3 Volt Advanced Boot Block flash memory architecture features two hardware-lockable
parameter blocks.
3.3.1
WP# = V
IL
for Block Locking
The lockable blocks are locked when WP# = V
IL
; any program or erase operation to a locked block
will result in an error, which will be reflected in the status register. For top configuration, the top
two parameter blocks (blocks #133 and #134 for the 64 Mbit, #69 and #70 for the 32 Mbit, blocks
#37 and #38 for the 16 Mbit, blocks #21 and #22 for the 8 Mbit, blocks #13 and #14 for the 4 Mbit)
are lockable. For the bottom configuration, the bottom two parameter blocks (blocks #0 and #1 for
4 /8 /16 /32/64 Mbit) are lockable. Unlocked blocks can be programmed or erased normally (unless
V
PP
is below V
PPLK
).
Table 7. Status Register Bit Definition
WSMS
ESS
ES
PS
VPPS
PSS
BLS
R
7
6
5
4
3
2
1
0
NOTES:
SR.7 = WRITE STATE MACHINE STATUS (WSMS)
1 = Ready
0 = Busy
Check Write State Machine bit first to determine word program
or block erase completion, before checking program or erase
status bits.
SR.6 = ERASE-SUSPEND STATUS (ESS)
1 = Erase Suspended
0 = Erase In Progress/Completed
When erase suspend is issued, WSM halts execution and sets
both WSMS and ESS bits to “1.” ESS bit remains set at “1” until
an Erase Resume command is issued.
SR.5 = ERASE STATUS (ES)
1 = Error In Block Erasure
0 = Successful Block Erase
When this bit is set to “1,” WSM has applied the max. number
of erase pulses to the block and is still unable to verify
successful block erasure.
SR.4 = PROGRAM STATUS (PS)
1 = Error in Word Program
0 = Successful Word Program
When this bit is set to “1,” WSM has attempted but failed to
program a word.
SR.3 = V
PP
STATUS (VPPS)
1 = V
PP
Low Detect, Operation Abort
0 = V
PP
OK
The V
PP
status bit does not provide continuous indication of
V
PP
level. The WSM interrogates V
PP
level only after the
Program or Erase command sequences have been entered,
and informs the system if V
PP
has not been switched on. The
V
PP
is also checked before the operation is verified by the
WSM. The V
PP
status bit is not guaranteed to report accurate
feedback between V
PPLK
max and V
PP1
min or between V
PP1
max and V
PP4
min.
SR.2 = PROGRAM SUSPEND STATUS (PSS)
1 = Program Suspended
0 = Program in Progress/Completed
When program suspend is issued, WSM halts execution and
sets both WSMS and PSS bits to “1.” PSS bit remains set to “1”
until a Program Resume command is issued.
SR.1 = BLOCK LOCK STATUS
1 = Program/Erase attempted on locked block;
Operation aborted
0 = No operation to locked blocks
If a program or erase operation is attempted to one of the
locked blocks, this bit is set by the WSM. The operation
specified is aborted and the device is returned to read status
mode.
SR.0 = RESERVED FOR FUTURE ENHANCEMENTS (R)
This bit is reserved for future use and should be masked out
when polling the status register.
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參數(shù)描述
TE28F320B3BC90 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F320B3BD90A 制造商:Micron Technology Inc 功能描述:32MB, ARMAGOSA 48LD TSOP
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TE28F320B3T90 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F320B3TA100 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
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