參數(shù)資料
型號： TE28F256P30
廠商： Intel Corp.
英文描述： Intel StrataFlash Memory (J3)
中文描述： 英特爾StrataFlash存儲器（J3）
文件頁數(shù)： 67/72頁
文件大?。?/td> 905K
代理商： TE28F256P30
256-Mbit J3 (x8/x16)
Datasheet
67
Figure 26. Protection Register Programming Flowchart
Start
Write C0H
(Protection Reg.
Program Setup)
Write Protect. Register
Address/Data
Read Status Register
SR.7 = 1
Full Status
Check if Desired
Program Complete
Read Status Register
Data (See Above)
V
PEN
Range Error
Protection Register
Programming Error
Attempted Program to
Locked Register -
Aborted
Program Successful
SR.3, SR.4 =
SR.1, SR.4 =
SR.1, SR.4 =
FULL STATUS CHECK PROCEDURE
Bus Operation
Write
Write
Standby
Protection Program operations can only be addressed within the protection
register address space. Addresses outside the defined space will return an
error.
Repeat for subsequent programming operations.
SR Full Status Check can be done after each program or after a sequence of
program operations.
Write FFH after the last program operation to reset device to read array mode.
Bus Operation
Standby
Standby
SR.3 MUST be cleared, if set during a program attempt, before further
attempts are allowed by the Write State Machine.
SR.1, SR.3 and SR.4 are only cleared by the Clear Staus Register Command,
in cases of multiple protection register program operations before full status is
checked.
If an error is detected, clear the status register before attempting retry or other
error recovery.
No
Yes
1, 1
0,1
1,1
Command
Protection Program
Setup
Protection Program
Comments
Data = C0H
Data = Data to Program
Addr = Location to Program
Check SR.7
1 = WSM Ready
0 = WSM Busy
Command
Comments
SR.1 SR.3 SR.4
0 1 1 V
PEN
Low
0 0 1 Prot. Reg.
Prog. Error
1 0 1 Register
Locked:
Aborted
Read
Status Register Data Toggle
CE# or OE# to Update Status
Register Data
Standby
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F256P30B85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
TE28F256P30B95 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx StrataFlash Embedded Memory
TE28F256P30B95A 功能描述:IC FLASH 256MBIT 95NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
TE28F256P30BFA 功能描述:IC FLASH 256MBIT 110NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:Axcell™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
TE28F256P30T85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
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