參數(shù)資料
型號(hào): TE28F256P30
廠商: Intel Corp.
英文描述: Intel StrataFlash Memory (J3)
中文描述: 英特爾StrataFlash存儲(chǔ)器(J3)
文件頁(yè)數(shù): 41/72頁(yè)
文件大?。?/td> 905K
代理商: TE28F256P30
256-Mbit J3 (x8/x16)
Datasheet
41
10.3
Read Query/CFI
The query register contains an assortment of flash product information such as block size, density,
allowable command sets, electrical specifications and other product information. The data
contained in this register conforms to the Common Flash Interface (CFI) protocol. To obtain any
information from the query register, execute the Read Query Register command. See
Section 9.2,
“Device Commands” on page 35
for details on issuing the CFI Query command. Refer to
Appendix A, “Query Structure Overview” on page 53
for a detailed explanation of the CFI register.
Information contained in this register can only be accessed by executing a single-word read.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F256P30B85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
TE28F256P30B95 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx StrataFlash Embedded Memory
TE28F256P30B95A 功能描述:IC FLASH 256MBIT 95NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
TE28F256P30BFA 功能描述:IC FLASH 256MBIT 110NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Axcell™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
TE28F256P30T85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory