參數(shù)資料
型號: TE28F160S3-100
廠商: INTEL CORP
元件分類: DRAM
英文描述: 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
中文描述: 2M X 8 FLASH 2.7V PROM, 100 ns, PDSO56
封裝: 14 X 20 MM, TSOP-56
文件頁數(shù): 38/52頁
文件大?。?/td> 1262K
代理商: TE28F160S3-100
28F160S3, 28F320S3
E
38
ADVANCE INFORMATION
SR.7 =
0
1
Start
Write 60H
Write D0H
Full Status
Check if Desired
Clear Block Lock-Bits
Complete
FULL STATUS CHECK PROCEDURE
1
0
Read Status Register
Data (See Above)
1
0
Read Status
Register
Voltage Range Error
1
0
Command Sequence
Error
SR.3 =
SR.5 =
SR.4,5 =
Clear Block Lock-Bits
Error
Bus
Operation
Command
Comments
Standby
Check SR.4,5
Both 1 = Command Sequence Error
Standby
SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status
Register command.
If error is detected, clear the Status Register before attempting
retry or other error recovery.
Check SR.5
1 = Clear Block Lock-Bits Error
Standby
Bus
Operation
Command
Comments
Write
Write
Clear Block
Lock-Bits Setup
Read
Data = 60H
Addr = X
Check SR.7
1 = WSM Ready
0 = WSM Busy
Write FFH after the Clear Block Lock-Bits operation to place device
to read array mode.
Status Register Data
Standby
Clear Block
Lock-Bits Confirm
Data = D0H
Addr = X
Clear Block Lock-Bits
Successful
Standby
0
1
Device Protect Error
SR.1=
Check SR.3
1 = Programming Voltage Error
Detect
Check SR.1
1 = Device Protect Detect
RST# = V , Master Lock-Bit Is Set
IH
Figure 13. Clear Block Lock-Bits Flowchart
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