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參數(shù)資料
| 型號： | TE28F160S3-100 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| 中文描述： | 2M X 8 FLASH 2.7V PROM, 100 ns, PDSO56 |
| 封裝： | 14 X 20 MM, TSOP-56 |
| 文件頁數(shù)： | 13/52頁 |
| 文件大?。?/td> | 1262K |
| 代理商： | TE28F160S3-100 |
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E
3.6
28F160S3, 28F320S3
13
ADVANCE INFORMATION
Read Identifier Codes
Operation
The read-identifier codes operation outputs the
manufacturer code, device code, and block lock
configuration codes for each block configuration
(see Figure 6). Using the manufacturer and
device
codes,
the
system
automatically match the device with its proper
algorithms. The block-lock configuration codes
identify each block’s lock-bit setting.
software
can
Figure 6. Device Identifier Code Memory Map
3.7
Write
Writing commands to the CUI enables reading of
device data, query, identifier codes, inspection
and clearing of the Status Register. Additionally,
when V
PP
= V
PPH1/2
, block erasure, programming,
and lock-bit configuration can also be performed.
The Block Erase command requires appropriate
command data and an address within the block
to be erased. The Byte/Word Write command
requires the command and address of the
location to be written. Set Block Lock-Bit
commands require the command and address
within the block to be locked. The Clear Block
Lock-Bits command requires the command and
an address within the device.
The CUI does not occupy an addressable
memory location. It is written when WE#, CE
0
#,
and CE
1
# are active and OE# = V
IH
. The address
and data needed to execute a command are
latched on the rising edge of WE# or CE
X
#
(CE
0
#, CE
1
#), whichever goes high first.
Standard microprocessor write timings are used.
Figure 18 illustrates a write operation.
4.0
COMMAND DEFINITIONS
V
PP
voltage
≤
V
PPLK
enables read operations
from the Status Register, identifier codes, or
memory blocks. Placing V
PPH1/2
on V
PP
enables
successful block erase, programming, and lock-
bit configuration operations.
Device operations are selected by writing specific
commands into the CUI. and Table 3 define
these commands.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TE28F320S3-120 | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| TE28F160S3-120 | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| TE28F400B3T90 | 3 Volt Advanced Boot Block Flash Memory |
| TE28F004 | 3 Volt Advanced Boot Block Flash Memory |
| TE28F004B3T90 | 3 Volt Advanced Boot Block Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F160S3-120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
| TE28F160S3-130 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
| TE28F160S3-75 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
| TE28F160S375-RFB | 制造商:Intel 功能描述: |
| TE28F200B5B80 | 制造商:Intel 功能描述: |
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