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參數(shù)資料
| 型號： | TE28F160B3TC70 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 3 Volt Advanced Boot Block Flash Memory |
| 中文描述： | 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數(shù)： | 29/49頁 |
| 文件大?。?/td> | 427K |
| 代理商： | TE28F160B3TC70 |
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E
4.0
SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
29
PRELIMINARY
ABSOLUTE MAXIMUM
RATINGS*
Extended Operating Temperature
During Read............................
–40°C to +85°C
During Block Erase
and Program............................ –40°C to +85°C
Temperature Under Bias ......... –40°C to +85°C
Storage Temperature................... –65°C to +125°C
Voltage on Any Pin
(except V
CC
, V
CCQ
and V
PP
)
with Respect to GND...............–0.5V to +5.0V
1
V
PP
Voltage (for Block
Erase and Program)
with Respect to GND.........–0.5V to +13.5V
1,2,4
V
CC
and V
CCQ
Supply Voltage
with Respect to GND...............–0.2V to +5.0V
1
Output Short Circuit Current...................... 100 mA
3
NOTICE: This datasheet contains preliminary information on
new products in production. Do not finalize a design with
this information. Revised information will be published when
the product is available. Verify with your local Intel Sales
office that you have the latest data sheet before finalizing a
design.
* WARNING: Stressing the device beyond the "Absolute
Maximum Ratings" may cause permanent damage. These
are stress ratings only. Operation beyond the "Operating
Conditions" is not recommended and extended exposure
beyond the "Operating Conditions" may effect device
reliability.
NOTES:
1.
Minimum DC voltage is
–0.5V on input/output pins.
During transitions, this level may undershoot to –2.0V
for periods < 20 ns. Maximum DC voltage on
input/output pins is V
+ 0.5V which, during
transitions, may overshoot to V
CC
+ 2.0V for periods <
20 ns.
2.
Maximum DC voltage on V
PP
may overshoot to +14.0V
for periods < 20 ns.
3.
Output shorted for no more than one second. No more
than one output shorted at a time.
4.
V
Program voltage is normally 2.7V–3.6V.
Connection to supply of 11.4V–12.6V can only be done
for 1000 cycles on the main blocks and 2500 cycles on
the parameter blocks during program/erase. V
PP
may
be connected to 12V for a total of 80 hours maximum.
See Section 3.4 for details.
5.0
OPERATING CONDITIONS (V
CCQ
= 2.7V
–3.6V)
Table 9. Temperature and Voltage Operating Conditions4
Symbol
Parameter
Notes
Min
Max
Units
T
A
Operating Temperature
–40
+85
°C
V
CC
2.7V–3.6V V
CC
Supply Voltage
1,4
2.7
3.6
Volts
V
CCQ
2.7V–3.6V I/O Supply Voltage
1,2,4
2.7
3.6
Volts
V
PP1
Program and Erase Voltage
4
2.7
3.6
Volts
V
PP2
3
11.4
12.6
Volts
Cycling
Block Erase Cycling
5
10,000
Cycles
NOTES:
1.
2.
3.
See DC Characteristics tables for voltage range-specific specifications.
The voltage swing on the inputs, V
IN
is required to match V
CCQ
.
Applying V
= 11.4V
–12.6V during a program/erase can only be done for a maximum of 1000 cycles on the main blocks
and 2500 cycles on the parameter blocks. V
PP
may be connected to 12V for a total of 80 hours maximum. See Section 3.4
for details.
V
CC
, V
CCQ
and V
PP1
must share the same supply when all three are between 2.7V and 3.6V.
For operating temperatures of –25
°
C– +85
°
C the device is projected to have a minimum block erase cycling of 10,000 to
30,000 cycles.
4.
5.
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相關代理商/技術參數(shù) |
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| TE28F160B3TC80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| TE28F160B3TD70A | 功能描述:IC FLASH 16MBIT 70NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 |
| TE28F160C3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory |
| TE28F160C3B110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F160C3B90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
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