參數(shù)資料
型號(hào)： TE28F800B3B150
廠商： INTEL CORP
元件分類(lèi)： DRAM
英文描述： SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
中文描述： 512K X 16 FLASH 3V PROM, 150 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁(yè)數(shù)： 1/49頁(yè)
文件大?。?/td> 427K
代理商： TE28F800B3B150
E
PRELIMINARY
May 1997
Order Number: 290580-002
n
Flexible SmartVoltage Technology
2.7V
–3.6V Program/Erase
2.7V–3.6V Read Operation
12V V
PP
Fast Production
Programming
n
2.7V or 1.8V I/O Option
Reduces Overall System Power
n
Optimized Block Sizes
Eight 4-KW Blocks for Data,
Top or Bottom Locations
Up to Thirty-One 32-KW Blocks for
Code
n
High Performance
2.7V–3.6V: 120 ns Max Access Time
n
Block Locking
V
CC
-Level Control through WP#
n
Low Power Consumption
20 mA Maximum Read Current
n
Absolute Hardware-Protection
V
PP
= GND Option
V
CC
Lockout Voltage
n
Extended Temperature Operation
–40°C to +85°C
n
Supports Code Plus Data Storage
Optimized for FDI, Flash Data
Integrator Software
Fast Program Suspend Capability
Fast Erase Suspend Capability
n
Extended Cycling Capability
10,000 Block Erase Cycles
n
Automated Word Program and Block
Erase
Command User Interface
Status Registers
n
SRAM-Compatible Write Interface
n
Automatic Power Savings Feature
n
Reset/Deep Power-Down
1 μA I
CC
Typical
Spurious Write Lockout
n
Standard Surface Mount Packaging
48-Ball
μ
BGA* Package
48-Lead TSOP Package
n
Footprint Upgradeable
Upgradeable from 2-, 4- and 8-Mbit
Boot Block
n
ETOX V (0.4
μ)
Flash Technology
The new Smart 3 Advanced Boot Block, manufactured on Intel’s latest 0.4μ technology, represents a feature-
rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability
(2.7V read, program and erase) with high-speed, low-power operation. Several new features have been
added, including the ability to drive the I/O at 1.8V, which significantly reduces system active power and
interfaces to 1.8V controllers. A new blocking scheme enables code and data storage within a single device.
Add to this the Intel-developed Flash Data Integrator (FDI) software and you have the most cost-effective,
monolithic code plus data storage solution on the market today. Smart 3 Advanced Boot Block Word-Wide
products will be available in 48-lead TSOP and 48-ball μBGA* packages. Additional information on this
product family can be obtained by accessing Intel’s WWW page: http://www.intel.com/design/flcomp.
SMART 3 ADVANCED BOOT BLOCK
WORD-WIDE
4-MBIT (256K X 16), 8-MBIT (512K X 16),
16-MBIT (1024K X 16)
FLASH MEMORY FAMILY
28F400B3, 28F800B3, 28F160B3
相關(guān)PDF資料
PDF描述
TE28F400BV-B80 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F400BV-T60 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F160B3BC80 3 Volt Advanced Boot Block Flash Memory
TE28F160B3T120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F160B3T150 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F800B3-B150 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F800B3B90 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F800B3BA110 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F800B3BA90 制造商:Intel 功能描述: 制造商:Intel 功能描述:NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP
TE28F800B3T110 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
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