參數(shù)資料
型號: TE28F160B3BC80
廠商: INTEL CORP
元件分類: DRAM
英文描述: 3 Volt Advanced Boot Block Flash Memory
中文描述: 1M X 16 FLASH 2.7V PROM, 80 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數(shù): 8/49頁
文件大?。?/td> 427K
代理商: TE28F160B3BC80
SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
E
8
PRELIMINARY
A
13
A
11
A
8
V
PP
WP#
NC
A
7
A
4
A
14
A
10
WE#
RP#
NC
A
17
A
5
A
2
A
15
A
12
A
9
A
6
A
3
A
1
A
16
D
14
D
5
D
11
D
2
D
8
CE#
A
0
V
CCQ
D
15
D
6
D
12
D
3
D
9
D
0
GND
GND
D
7
D
13
D
4
V
CC
D
10
D
1
OE#
A
B
C
D
E
F
1
2
3
4
5
6
7
8
0580_02
NOTE:
Dotted connections indicate placeholders where there is no solder ball. These connections are reserved for future upgrades.
Routing is not recommended in this area.
Figure 2. 4-Mbit 48-Ball
μ
BGA* Chip Size Package
A
13
A
11
A
8
V
PP
WP#
NC
A
7
A
4
A
14
A
10
WE#
RP#
A
18
A
17
A
5
A
2
A
15
A
12
A
9
A
6
A
3
A
1
A
16
D
14
D
5
D
11
D
2
D
8
CE#
A
0
V
CCQ
D
15
D
6
D
12
D
3
D
9
D
0
GND
GND
D
7
D
13
D
4
V
CC
D
10
D
1
OE#
A
B
C
D
E
F
1
2
3
4
5
6
7
8
0580_03
NOTE:
Dotted connections indicate placeholders where there is no solder ball. These connections are reserved for future upgrades.
Routing is not recommended in this area.
Figure 3. 8-Mbit 48-Ball
μ
BGA* Chip Size Package
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