參數(shù)資料
型號(hào): TE28F128P30B85
廠商: INTEL CORP
元件分類(lèi): DRAM
英文描述: Intel StrataFlash Embedded Memory
中文描述: 8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
封裝: 14 X 20 MM, TSOP-56
文件頁(yè)數(shù): 86/102頁(yè)
文件大?。?/td> 1609K
代理商: TE28F128P30B85
1-Gbit P30 Family
April 2005
86
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
Figure 41.
Program Suspend/Resume Flowchart
Read Status
Register
SR.7 =
SR.2 =
Write FFh
Susp Partition
Read Array
Data
Program
Completed
Done
Reading
Write FFh
Pgm'd Partition
Write D0h
Any Address
Program
Resumed
Read Array
Data
0
No
0
Yes
1
1
PROGRAM SUSPEND / RESUME PROCEDURE
Write
Program
Resume
Data = D0h
Addr = Suspended block (BA)
OpBus
Comments
Write
Program
Suspend
Data = B0h
Addr = Block to suspend (BA)
Standby
Check SR.7
1 = WSM ready
0 = WSM busy
Standby
Check SR.2
1 = Program suspended
0 = Program completed
Write
Read
Array
Data = FFh
Addr = Any address within the
suspended partition
Read
Read array data from block other than
the one being programmed
Read
Status register data
Addr = Suspended block (BA)
PGM_SUS.WMF
Start
Write B0h
Any Address
Program Suspend
Read Status
Write 70h
Same Partition
Program Resume
Read Array
Read Array
Write
Read
Status
Data = 70h
Addr = Same partition
If the suspended partition was placed in Read Array mode:
Write
Read
Status
Return partition to Status mode:
Data = 70h
Addr = Same partition
Write 70h
Same Partition
Read Status
相關(guān)PDF資料
PDF描述
TE28F160B3-B120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F800B3-B120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F400B3-B120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F160B3-B150 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F800B3-B150 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F128P30B85A 功能描述:IC FLASH 128MBIT 85NS 56TSOP RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤(pán) 其它名稱(chēng):71P71804S200BQ
TE28F128P30T85 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:Numonyx StrataFlash Embedded Memory
TE28F128P30T85A 功能描述:IC FLASH 128MBIT 85NS 56TSOP RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤(pán) 其它名稱(chēng):71P71804S200BQ
TE28F128P30XXX 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
TE28F128P33B85A 功能描述:IC FLASH 128MBIT 85NS 56TSOP RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤(pán) 其它名稱(chēng):71P71804S200BQ