參數(shù)資料
型號： TE28F128P30B85
廠商： INTEL CORP
元件分類： DRAM
英文描述： Intel StrataFlash Embedded Memory
中文描述： 8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
封裝： 14 X 20 MM, TSOP-56
文件頁數(shù)： 71/102頁
文件大?。?/td> 1609K
代理商： TE28F128P30B85
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
71
SR[5]. If a command sequence error occurs during an erase suspend, SR[4] and SR[5] remains set,
even after the erase operation is resumed. Unless the Status Register is cleared using the Clear
Status Register command before resuming the erase operation, possible erase errors may be
masked by the command sequence error.
If a block is locked or locked-down during an erase suspend of the
same
block, the lock status bits
change immediately. However, the erase operation completes when it is resumed. Block lock
operations cannot occur during a program suspend. See
Appendix A, “Write State Machine” on
page 78
, which shows valid commands during an erase suspend.
13.2
Selectable One-Time Programmable Blocks
Any of four pre-defined areas from the main array (the four 32 KB parameter blocks together as
one and the three adjacent 128 KB main blocks) can be configured as One-Time Programmable
(OTP) so further program and erase operations are not allowed. This option is available for top or
bottom parameter devices.
Please see your local Intel representative for details about the Selectable OTP implementation.
Table 27.
Selectable OTP Block Mapping
Density
Top Parameter Configuration
Bottom Parameter Configuration
256-Mbit
blocks 258:255 (parameters)
blocks 3:0 (parameters)
block 254 (main)
block 4 (main)
block 253 (main)
block 5 (main)
block 252 (main)
block 6 (main)
128-Mbit
blocks 130:127 (parameters)
blocks 3:0 (parameters)
block 126 (main)
block 4 (main)
block 125 (main)
block 5 (main)
block 124 (main)
block 6 (main)
64-Mbit
blocks 66:63 (parameters)
blocks 3:0 (parameters)
block 62 (main)
block 4 (main)
block 61 (main)
block 5 (main)
block 60 (main)
block 6 (main)
Note:
The 512-Mbit and 1-Gbit devices will have multiple Selectable OTP Areas depending on
the number of 256-Mbit dies in the stack and the placement of the parameter blocks.
相關(guān)PDF資料
PDF描述
TE28F160B3-B120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F800B3-B120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F400B3-B120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F160B3-B150 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F800B3-B150 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F128P30B85A 功能描述:IC FLASH 128MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
TE28F128P30T85 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx StrataFlash Embedded Memory
TE28F128P30T85A 功能描述:IC FLASH 128MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
TE28F128P30XXX 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
TE28F128P33B85A 功能描述:IC FLASH 128MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*