參數(shù)資料
型號(hào): TE28F128P30B85
廠商: INTEL CORP
元件分類: DRAM
英文描述: Intel StrataFlash Embedded Memory
中文描述: 8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
封裝: 14 X 20 MM, TSOP-56
文件頁(yè)數(shù): 73/102頁(yè)
文件大?。?/td> 1609K
代理商: TE28F128P30B85
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
73
.
Figure 33.
13.3.1
Reading the Protection Registers
The Protection Registers can be read from any address. To read the Protection Register, first issue
the Read Device Identifier command at any address to place the device in the Read Device
Identifier state (see
Section 9.2, “Device Commands” on page 50
). Next, perform a read operation
using the address offset corresponding to the register to be read.
Table 29, “Device Identifier
Information” on page 77
shows the address offsets of the Protection Registers and Lock Registers.
Register data is read 16 bits at a time.
13.3.2
Programming the Protection Registers
To program any of the Protection Registers, first issue the Program Protection Register command
at the parameter’s base address plus the offset to the desired Protection Register (see
Section 9.2,
“Device Commands” on page 50
). Next, write the desired Protection Register data to the same
Protection Register address (see
Figure 33, “Protection Register Map” on page 73
).
Protection Register Map
0x89
Lock Register 1
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
0x102
0x109
0x8A
0x91
128-bit Protection Register 16
(User-Programmable)
128-bit Protection Register 1
(User-Programmable)
0x88
0x85
0x84
64-bit Segment
(User-Programmable)
128-Bit Protection Register 0
0x81
0x80
Lock Register 0
64-bit Segment
(Factory-Programmed)
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
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